The AT45DB641E-MWHN-Y has the following pin configuration:
Advantages: - High-density storage capacity - Low power consumption - Fast read and write operations - Flexible erase options - Software protection feature - Wide operating temperature range
Disadvantages: - Limited number of write/erase cycles - Relatively small page size compared to other flash memory devices - Requires external components for proper operation
The AT45DB641E-MWHN-Y is based on the floating-gate technology, which allows for non-volatile data storage. It utilizes a serial interface to communicate with the host microcontroller or system. The device can be accessed using either SPI or RapidS interface modes.
Data is stored in uniform sectors, each consisting of multiple pages. The user can perform various operations such as reading, writing, erasing, and protecting data using specific commands sent through the serial interface. The status register provides information about the ongoing operations and device conditions.
The AT45DB641E-MWHN-Y is widely used in various applications, including but not limited to:
These alternative models offer similar functionality and characteristics to the AT45DB641E-MWHN-Y, providing options for different memory sizes and manufacturers.
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Sure! Here are 10 common questions and answers related to the application of AT45DB641E-MWHN-Y in technical solutions:
Q: What is the AT45DB641E-MWHN-Y? A: The AT45DB641E-MWHN-Y is a high-density flash memory device manufactured by Adesto Technologies. It offers 64 megabits (8 megabytes) of storage capacity.
Q: What are some typical applications for the AT45DB641E-MWHN-Y? A: This flash memory device is commonly used in various embedded systems, industrial automation, automotive electronics, consumer electronics, and other applications that require non-volatile storage.
Q: What is the interface protocol supported by the AT45DB641E-MWHN-Y? A: The AT45DB641E-MWHN-Y supports the Serial Peripheral Interface (SPI) protocol, which is widely used in many microcontroller-based systems.
Q: What is the operating voltage range of the AT45DB641E-MWHN-Y? A: The AT45DB641E-MWHN-Y operates within a voltage range of 2.7V to 3.6V.
Q: How fast can data be read from the AT45DB641E-MWHN-Y? A: The maximum data transfer rate for reading from this flash memory device is 85 MHz.
Q: Can the AT45DB641E-MWHN-Y be easily integrated into existing designs? A: Yes, it comes in a standard 8-pin SOIC package, making it easy to integrate into existing circuit boards.
Q: Does the AT45DB641E-MWHN-Y support hardware or software write protection? A: Yes, it supports both hardware and software write protection mechanisms to prevent accidental or unauthorized modification of data.
Q: What is the typical endurance of the AT45DB641E-MWHN-Y? A: The AT45DB641E-MWHN-Y has a typical endurance of 100,000 program/erase cycles per sector.
Q: Can the AT45DB641E-MWHN-Y operate in extreme temperature conditions? A: Yes, it has an extended operating temperature range of -40°C to +85°C, making it suitable for use in harsh environments.
Q: Are there any development tools or software libraries available for working with the AT45DB641E-MWHN-Y? A: Yes, Adesto Technologies provides various development tools, documentation, and software libraries to assist developers in integrating and programming the AT45DB641E-MWHN-Y in their applications.
Please note that these answers are general and may vary depending on specific implementation details and requirements.