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BLF7G20L-250P,112

BLF7G20L-250P,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A (LFPAK56D) - Essence: High-performance RF power transistor for use in high-frequency amplifiers - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 0.03 - 2.5 GHz - Output Power: 20W - Gain: 13 dB - Efficiency: 70% - Voltage: 28V - Current: 1.5A

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected - Pin 6: Source - Pin 7: Gate - Pin 8: Drain

Functional Features: - High Power Gain - Broadband Performance - Excellent Linearity - Thermally Enhanced Package

Advantages: - High Power Output - Wide Frequency Range - Low Distortion - Compact Package

Disadvantages: - Higher Cost Compared to Lower Power Alternatives - Requires Adequate Heat Dissipation

Working Principles: The BLF7G20L-250P,112 operates on the principle of amplifying radio frequency signals using a combination of high-power gain and efficient power conversion.

Detailed Application Field Plans: - Cellular Base Stations - Radar Systems - Wireless Communication Equipment - Test and Measurement Instrumentation

Detailed and Complete Alternative Models: - BLF888A (30W, 2.5 - 450 MHz) - BLF184XR (25W, 470 - 860 MHz) - BLF578XR (140W, 470 - 860 MHz)

This information provides a comprehensive overview of the BLF7G20L-250P,112, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af BLF7G20L-250P,112 i tekniske løsninger

  1. What is the maximum power dissipation of BLF7G20L-250P,112?

    • The maximum power dissipation of BLF7G20L-250P,112 is 250 watts.
  2. What is the operating frequency range of BLF7G20L-250P,112?

    • The operating frequency range of BLF7G20L-250P,112 is from 0.5 to 2.5 GHz.
  3. What is the typical gain of BLF7G20L-250P,112?

    • The typical gain of BLF7G20L-250P,112 is around 20 dB.
  4. What are the recommended bias conditions for BLF7G20L-250P,112?

    • The recommended bias conditions for BLF7G20L-250P,112 are typically Vdd = 28 V and Idq = 1500 mA.
  5. What is the input and output impedance of BLF7G20L-250P,112?

    • The input and output impedance of BLF7G20L-250P,112 is 50 ohms.
  6. What is the typical efficiency of BLF7G20L-250P,112 at maximum output power?

    • The typical efficiency of BLF7G20L-250P,112 at maximum output power is around 55%.
  7. What are the typical applications for BLF7G20L-250P,112?

    • BLF7G20L-250P,112 is commonly used in RF power amplifiers for base station applications in wireless infrastructure.
  8. What are the thermal characteristics of BLF7G20L-250P,112?

    • BLF7G20L-250P,112 has a thermal resistance of 0.5°C/W junction to case.
  9. What are the storage and operating temperature ranges for BLF7G20L-250P,112?

    • The storage temperature range for BLF7G20L-250P,112 is from -65°C to 150°C, while the operating temperature range is from -20°C to 65°C.
  10. What are the key differences between BLF7G20L-250P,112 and its predecessor models?

    • BLF7G20L-250P,112 offers higher power dissipation and improved efficiency compared to its predecessor models, making it suitable for more demanding RF power amplifier applications.