BDW73B-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power dissipation, high current capability, low saturation voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per tube

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 12A
• Power Dissipation (PD): 80W
• DC Current Gain (hFE): 25 - 160
• Transition Frequency (fT): 30MHz

Detailed Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High current gain
• Low noise
• Fast switching speed
• Excellent linearity

Advantages

• High power dissipation capability
• Low saturation voltage
• Wide range of current gain

Disadvantages

• Moderate transition frequency
• Sensitivity to temperature variations

Working Principles

The BDW73B-S operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

The BDW73B-S is commonly used in audio amplifiers, power supplies, motor control circuits, and high-frequency inverters due to its high power dissipation and current capability. It is also utilized in industrial and automotive applications where robust performance is required.

Detailed and Complete Alternative Models

• BDW73B
• BDW73C
• BDW74B
• BDW74C

Note: The above list is not exhaustive and there are other alternative models available from different manufacturers.

This comprehensive entry provides an in-depth understanding of the BDW73B-S, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.