Infineon Technologies
Billedet kan være en repræsentation.
Se specifikationer for produktdetaljer.
IPB160N04S2L03ATMA1
Se detaljer DataSheets

IPB160N04S2L03ATMA1

Product Overview

Category

The IPB160N04S2L03ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as in power supplies, motor control, and battery management systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB160N04S2L03ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power conversion and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels with a quantity of 1000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 160A
  • RDS(ON) (at VGS = 10V): 1.3mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 150nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB160N04S2L03ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Reliable operation under high currents and voltages

Advantages and Disadvantages

Advantages

  • High current-carrying capability
  • Low on-resistance for reduced power dissipation
  • Fast switching characteristics
  • Wide operating temperature range

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly and soldering

Working Principles

The IPB160N04S2L03ATMA1 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

The IPB160N04S2L03ATMA1 is widely used in the following application fields: - Power supplies and converters - Motor drives and control systems - Battery protection and charging circuits - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IPB160N04S2L03ATMA1 include: - IRF1405PbF - FDP8878 - AUIRFN014N

In conclusion, the IPB160N04S2L03ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of power management applications.

[Word count: 398]

Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IPB160N04S2L03ATMA1 i tekniske løsninger

  1. What is the maximum drain-source voltage of IPB160N04S2L03ATMA1?

    • The maximum drain-source voltage of IPB160N04S2L03ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB160N04S2L03ATMA1?

    • The continuous drain current rating of IPB160N04S2L03ATMA1 is 160A.

  3. What is the on-resistance of IPB160N04S2L03ATMA1?

    • The on-resistance of IPB160N04S2L03ATMA1 is typically 1.7mΩ at Vgs=10V.

  4. Can IPB160N04S2L03ATMA1 be used in automotive applications?

    • Yes, IPB160N04S2L03ATMA1 is designed for automotive applications.

  5. What is the operating temperature range of IPB160N04S2L03ATMA1?

    • The operating temperature range of IPB160N04S2L03ATMA1 is -55°C to 175°C.

  6. Does IPB160N04S2L03ATMA1 have built-in ESD protection?

    • Yes, IPB160N04S2L03ATMA1 features built-in ESD protection.

  7. What is the gate threshold voltage of IPB160N04S2L03ATMA1?

    • The gate threshold voltage of IPB160N04S2L03ATMA1 is typically 2.5V.

  8. Is IPB160N04S2L03ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB160N04S2L03ATMA1 is suitable for high-frequency switching applications.

  9. What package type does IPB160N04S2L03ATMA1 come in?

    • IPB160N04S2L03ATMA1 is available in a TO-263-7 package.

  10. What are some typical applications for IPB160N04S2L03ATMA1?

    • Typical applications for IPB160N04S2L03ATMA1 include motor control, power supplies, and automotive systems.