Infineon Technologies
Billedet kan være en repræsentation.
Se specifikationer for produktdetaljer.
IPB80N04S204ATMA1
Se detaljer DataSheets

IPB80N04S204ATMA1

Product Overview

Category

The IPB80N04S204ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Excellent thermal performance

Package

The IPB80N04S204ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 80A
  • RDS(ON) (Max) @ VGS = 10V: 4mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N04S204ATMA1 follows the standard pin configuration for a power MOSFET: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Enhanced thermal performance

Advantages

  • Efficient power management
  • Reduced heat dissipation
  • Improved system reliability
  • Suitable for high-frequency applications

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly and soldering

Working Principles

The IPB80N04S204ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB80N04S204ATMA1 finds extensive use in the following applications: - Switch-mode power supplies - Motor control systems - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPB80N04S204ATMA1 include: - IRF1405PBF - FDP8878 - AUIRFN014

In conclusion, the IPB80N04S204ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management and control applications, making it an essential component in modern electronic systems.

Word Count: 386

Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IPB80N04S204ATMA1 i tekniske løsninger

  1. What is the maximum drain-source voltage of IPB80N04S204ATMA1?

    • The maximum drain-source voltage of IPB80N04S204ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB80N04S204ATMA1?

    • The continuous drain current rating of IPB80N04S204ATMA1 is 80A.

  3. What is the on-state resistance (RDS(on)) of IPB80N04S204ATMA1?

    • The on-state resistance (RDS(on)) of IPB80N04S204ATMA1 is typically 4mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB80N04S204ATMA1?

    • The gate threshold voltage of IPB80N04S204ATMA1 is typically 2V.

  5. Can IPB80N04S204ATMA1 be used in automotive applications?

    • Yes, IPB80N04S204ATMA1 is designed for use in automotive applications.

  6. What is the operating temperature range of IPB80N04S204ATMA1?

    • The operating temperature range of IPB80N04S204ATMA1 is -55°C to 175°C.

  7. Does IPB80N04S204ATMA1 have built-in ESD protection?

    • Yes, IPB80N04S204ATMA1 features built-in ESD protection.

  8. Is IPB80N04S204ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB80N04S204ATMA1 is suitable for high-frequency switching applications.

  9. What package type does IPB80N04S204ATMA1 come in?

    • IPB80N04S204ATMA1 is available in a TO-263-7 package.

  10. Are there any application notes or reference designs available for using IPB80N04S204ATMA1 in motor control circuits?

    • Yes, application notes and reference designs are available for using IPB80N04S204ATMA1 in motor control circuits.