IPB80N04S2H4ATMA1

Product Overview

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge
Avalanche energy specified
RoHS compliant

Package

The IPB80N04S2H4ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with a quantity varying based on customer requirements.

Specifications

Drain-Source Voltage (VDS): 40V
Continuous Drain Current (ID): 80A
On-Resistance (RDS(on)): 4.2mΩ
Total Gate Charge (Qg): 60nC
Avalanche Energy (EAS): 280mJ
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB80N04S2H4ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High current-carrying capability
Low conduction losses
Fast switching characteristics
Enhanced ruggedness and reliability

Advantages

Efficient power handling
Reduced heat dissipation
Improved system performance
Enhanced circuit protection

Disadvantages

Higher cost compared to standard MOSFETs
Sensitive to electrostatic discharge (ESD)

Working Principles

The IPB80N04S2H4ATMA1 operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB80N04S2H4ATMA1 is widely used in: - Switch-mode power supplies - Motor control systems - Electronic lighting ballasts - Automotive applications - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB80N04S2H4ATMA1 include: - IRF3205 - FDP8870 - STP80NF03L

In conclusion, the IPB80N04S2H4ATMA1 is a high-performance power MOSFET with excellent characteristics and functional features, making it suitable for a wide range of applications in various industries.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IPB80N04S2H4ATMA1 i tekniske løsninger

What is the maximum drain-source voltage of IPB80N04S2H4ATMA1?
- The maximum drain-source voltage of IPB80N04S2H4ATMA1 is 40V.
What is the continuous drain current rating of IPB80N04S2H4ATMA1?
- The continuous drain current rating of IPB80N04S2H4ATMA1 is 80A.
What is the on-resistance of IPB80N04S2H4ATMA1?
- The on-resistance of IPB80N04S2H4ATMA1 is typically 4.2mΩ at Vgs=10V.
What is the gate threshold voltage of IPB80N04S2H4ATMA1?
- The gate threshold voltage of IPB80N04S2H4ATMA1 is typically 2V.
Is IPB80N04S2H4ATMA1 suitable for high-frequency switching applications?
- Yes, IPB80N04S2H4ATMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
What is the operating temperature range of IPB80N04S2H4ATMA1?
- The operating temperature range of IPB80N04S2H4ATMA1 is -55°C to 175°C.
Does IPB80N04S2H4ATMA1 have built-in ESD protection?
- Yes, IPB80N04S2H4ATMA1 has built-in ESD protection, making it more robust in handling electrostatic discharge events.
Can IPB80N04S2H4ATMA1 be used in automotive applications?
- Yes, IPB80N04S2H4ATMA1 is designed for automotive applications and meets the necessary standards for reliability and performance in automotive environments.
What package type does IPB80N04S2H4ATMA1 come in?
- IPB80N04S2H4ATMA1 comes in a TO-263-7 package.
Are there any application notes or reference designs available for using IPB80N04S2H4ATMA1 in technical solutions?
- Yes, there are application notes and reference designs available from the manufacturer to assist in the implementation of IPB80N04S2H4ATMA1 in various technical solutions.