IS42S81600E-7TL

Product Overview

Category

IS42S81600E-7TL belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact size
• Compatibility with various electronic devices

Package

IS42S81600E-7TL is available in a small outline, thin profile (TSOP) package.

Essence

The essence of IS42S81600E-7TL lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

IS42S81600E-7TL is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M x 16 bits
• Operating Voltage: 3.3V
• Speed Grade: -7 (7ns)
• Interface: Parallel
• Clock Frequency: Up to 166 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS42S81600E-7TL has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CS4
44. /CS5
45. /CS6
46. /CS7
47. /OE
48. /LDQM
49. /UDQM
50. VDD
51. VDD
52. VSS
53. VSS
54. VSS

Functional Features

• High-speed data transfer with synchronous operation
• Burst mode for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

• Fast data transfer speeds
• Low power consumption
• Compact size
• Compatibility with various electronic devices
• Efficient burst mode operation

Disadvantages

• Limited capacity compared to higher-end DRAM chips
• Relatively higher cost per megabit compared to other memory technologies

Working Principles

IS42S81600E-7TL operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to the chip, which activates the corresponding capacitors and retrieves the stored data.

Detailed Application Field Plans

IS42S81600E-7TL finds applications in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS42S81600E-7TL that offer similar functionality and specifications include: - MT48LC16M16A2P-75: 16 Megabit SDRAM, -75ns speed grade, parallel interface - K4S561632H-UC60: 16 Megabit SDRAM, -60ns speed grade, parallel interface - HYB39S16160T-7: 16 Megabit SDRAM, -7ns speed grade, parallel interface

These alternative models can be considered based on specific requirements and availability.

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