IS45S32200E-7TLA2

Product Overview

Category

IS45S32200E-7TLA2 belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact size

Package

IS45S32200E-7TLA2 is available in a small form factor package, which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS45S32200E-7TLA2 is typically packaged in reels or trays, with each package containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 4M x 8 bits
• Interface: Parallel
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 5 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS45S32200E-7TLA2 is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. CKE
16. CLK
17. NC
18. VDDQ
19. DQM0
20. DQM1

Note: This is a simplified pin configuration. Please refer to the product datasheet for a complete and detailed pinout.

Functional Features

• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexible performance optimization
• Internal pipelined architecture for efficient data access

Advantages and Disadvantages

Advantages

• High-speed operation enables faster data processing
• Large storage capacity allows for storing a significant amount of data
• Low power consumption helps prolong battery life in portable devices
• Compact size facilitates integration into space-constrained electronic devices

Disadvantages

• Limited compatibility with certain older systems that do not support SDRAM technology
• Relatively higher cost compared to other memory technologies such as NAND flash

Working Principles

IS45S32200E-7TLA2 operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The memory cells store data in the form of electrical charges, which are refreshed periodically to maintain data integrity.

Detailed Application Field Plans

IS45S32200E-7TLA2 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models to IS45S32200E-7TLA2 include: - IS45S32400E-7TLA2: 64 Megabits (8 Megabytes) capacity - IS45S32800E-7TLA2: 128 Megabits (16 Megabytes) capacity - IS45S31600E-7TLA2: 16 Megabits (2 Megabytes) capacity

These alternative models offer different storage capacities to cater to various application requirements.

In conclusion, IS45S32200E-7TLA2 is a high-speed synchronous DRAM product with a capacity of 32 Megabits. It offers advantages such as fast operation, large storage capacity, low power consumption, and compact size. However, it may have limited compatibility and a relatively higher cost compared to other memory technologies. This product finds applications in a wide range of electronic devices and has alternative models with varying capacities to suit different needs.