IS45S32200E-7TLA2-TR

Product Overview

Category

IS45S32200E-7TLA2-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size
• Reliable performance

Package

IS45S32200E-7TLA2-TR is available in a small form factor package, designed to fit into various electronic devices seamlessly.

Essence

The essence of this product lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

IS45S32200E-7TLA2-TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 32 Megabits (4 Megabytes)
• Interface: Parallel
• Operating Voltage: 3.3V
• Clock Frequency: Up to 166 MHz
• Access Time: 5 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS45S32200E-7TLA2-TR consists of multiple pins, each serving a specific purpose. Here is a brief overview of some important pins:

1. VDD: Power supply voltage input
2. VSS: Ground reference
3. DQ0-DQ15: Data input/output pins
4. WE: Write enable
5. CAS: Column address strobe
6. RAS: Row address strobe
7. CLK: Clock input
8. CS: Chip select

Please refer to the product datasheet for a complete pin configuration diagram.

Functional Features

• Random access memory organization
• Burst mode operation for high-speed data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Multiple banks for concurrent operations

Advantages and Disadvantages

Advantages

• High-speed data access improves overall system performance
• Non-volatile memory ensures data retention even during power loss
• Low power consumption prolongs battery life in portable devices
• Compact size allows for integration into space-constrained designs
• Reliable performance ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative memory options

Working Principles

IS45S32200E-7TLA2-TR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending row and column addresses to select the desired location within the memory array. The stored data can be read or written by activating the appropriate control signals.

Detailed Application Field Plans

IS45S32200E-7TLA2-TR finds applications in various electronic devices that require fast and reliable data storage and retrieval. Some common application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Mobile Phones and Tablets
5. Gaming Consoles
6. Automotive Electronics
7. Industrial Control Systems
8. Medical Devices

Detailed and Complete Alternative Models

• IS45S32400E-7TLA2-TR
• IS45S32800E-7TLA2-TR
• IS45S321600E-7TLA2-TR

These alternative models offer similar functionality and specifications, providing options for different memory capacity requirements.

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