IS61DDB21M36-250M3

Product Overview

Category

IS61DDB21M36-250M3 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61DDB21M36-250M3 is available in a small form factor package, suitable for surface mount technology (SMT) applications.

Essence

The essence of IS61DDB21M36-250M3 lies in its ability to provide efficient and reliable data storage and retrieval capabilities in electronic devices.

Packaging/Quantity

IS61DDB21M36-250M3 is typically packaged in reels or trays, with a quantity of 250 units per package.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 2 Gb (Gigabits)
• Organization: 256M x 8 bits
• Operating Voltage: 2.5V
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. WE#
11. CAS#
12. RAS#
13. CKE
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0
31. BA1
32. CLK

Functional Features

• High-speed data transfer
• Random access capability
• Low power consumption
• Refresh functionality for maintaining data integrity
• Easy integration with various electronic devices

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for space-efficient designs.
• Reliable operation ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Sensitive to external factors such as temperature and voltage fluctuations.
• Higher cost compared to some alternative memory solutions.

Working Principles

IS61DDB21M36-250M3 operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The memory controller sends commands and addresses to access specific data stored in the memory array.

Detailed Application Field Plans

IS61DDB21M36-250M3 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Mobile devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS61DDB21M36-250M3 include: - IS61DDB21M36-200M3: Similar specifications but with a lower clock frequency of 200 MHz. - IS61DDB21M36-300M3: Similar specifications but with a higher clock frequency of 300 MHz. - IS61DDB21M36-250M4: Similar specifications but with a different package type.

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