IS61DDB41M36A-300M3LI

Product Overview

Category

IS61DDB41M36A-300M3LI belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable operation

Package

IS61DDB41M36A-300M3LI is available in a small form factor package, suitable for surface mount technology (SMT) applications.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61DDB41M36A-300M3LI is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 4 Gigabits (Gb)
• Organization: 1 Rank x 8 Banks x 16,384 Rows x 2,048 Columns
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 300 MHz
• Interface: Double Data Rate 2 (DDR2)
• Operating Temperature Range: -40°C to +85°C
• Package Type: 90-ball Ball Grid Array (BGA)

Detailed Pin Configuration

The pin configuration of IS61DDB41M36A-300M3LI is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | VDDQ | Power Supply Voltage for I/O | | 3 | DQ | Data Input/Output | | 4 | DQ | Data Input/Output | | ... | ... | ... | | 90 | VSSQ | Ground for I/O | | 91 | VSS | Ground | | 92 | VSS | Ground |

Functional Features

• High-speed data transfer
• Low power consumption
• Self-refresh capability
• Auto precharge and burst mode operation
• On-die termination (ODT) for improved signal integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Compact size for space-constrained applications
• Low power consumption for energy efficiency
• Reliable operation in various environmental conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Sensitivity to electrical noise and interference
• Higher cost per unit compared to some alternative memory options

Working Principles

IS61DDB41M36A-300M3LI operates based on the principles of dynamic random access memory (DRAM). It stores digital information as charge in capacitors within its memory cells. To read or write data, the appropriate row and column addresses are selected, and the charge is either sensed or modified.

Detailed Application Field Plans

IS61DDB41M36A-300M3LI finds application in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Networking equipment - Mobile devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to IS61DDB41M36A-300M3LI include: - IS61DDP41M36A-300M3LI - IS61DDP41M36B-300M3LI - IS61DDP41M36C-300M3LI - IS61DDP41M36D-300M3LI

These models offer similar specifications and functionality, providing flexibility in choosing the most suitable option for specific applications.

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