IS61QDB41M18A-250M3L

Product Overview

Category

IS61QDB41M18A-250M3L belongs to the category of memory products.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable data retention
• Wide temperature range operation

Package

IS61QDB41M18A-250M3L comes in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of IS61QDB41M18A-250M3L lies in its ability to provide fast and efficient data storage capabilities while consuming minimal power.

Packaging/Quantity

IS61QDB41M18A-250M3L is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Double Data Rate 2 (DDR2) Synchronous DRAM
• Capacity: 1 Gigabit (128 Megabytes)
• Organization: 64 Meg x 16
• Speed Grade: 250 MHz
• Operating Voltage: 1.8V ± 0.1V
• Interface: Parallel
• Package Type: 84-ball FBGA
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61QDB41M18A-250M3L is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply | | 2 | VDDQ | Power Supply for I/O | | 3 | DQ0 | Data Input/Output Bit 0 | | 4 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 84 | VSS | Ground |

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto precharge and power-down modes
• On-die termination (ODT) for improved signal integrity
• Internal calibration for optimal performance

Advantages and Disadvantages

Advantages

• Fast data transfer rate
• Low power consumption
• Compact size for space-constrained designs
• Reliable data retention even in harsh environments

Disadvantages

• Limited capacity compared to newer memory technologies
• Requires parallel interface, which may not be suitable for all applications

Working Principles

IS61QDB41M18A-250M3L operates based on the principles of DDR2 SDRAM. It utilizes a synchronous interface and double data rate technology to achieve high-speed data transfer. The memory cells store data in a binary format using electrical charges, which can be read or written by the device's controller.

Detailed Application Field Plans

IS61QDB41M18A-250M3L finds application in various electronic devices, including but not limited to: - Mobile phones - Tablets - Digital cameras - Portable media players - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61QDB41M18A-250M3L include: - MT47H64M16HR-25E: Micron Technology Inc. - K4S641632K-UC75: Samsung Electronics Co., Ltd. - HYB18T512800AF-3S: Infineon Technologies AG

These alternative models provide comparable specifications and can be considered as substitutes for IS61QDB41M18A-250M3L in various applications.

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