IS61WV25616BLL-10TLI

Product Overview

Category

IS61WV25616BLL-10TLI belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The IS61WV25616BLL-10TLI offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM chip is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
• Reliable performance: The product ensures reliable data storage and retrieval, providing stable operation even in demanding environments.
• Compact package: The chip is available in a small form factor package, allowing for easy integration into space-constrained designs.
• High-density storage: With a capacity of 256 kilobits, this SRAM chip provides ample storage space for various data-intensive applications.

Packaging/Quantity

The IS61WV25616BLL-10TLI is typically packaged in a surface-mount 44-pin TSOP (Thin Small Outline Package). It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Organization: 32K words x 8 bits
• Supply voltage: 2.7V - 3.6V
• Access time: 10 ns
• Operating temperature range: -40°C to +85°C
• Standby current: 5 μA (typical)
• Package dimensions: 12.8mm x 20.4mm x 1.0mm

Detailed Pin Configuration

The IS61WV25616BLL-10TLI features a 44-pin TSOP package with the following pin configuration:

Pin Name Description 1 A12 Address Input 2 A7 Address Input 3 A6 Address Input 4 A5 Address Input 5 A4 Address Input 6 A3 Address Input 7 A2 Address Input 8 A1 Address Input 9 A0 Address Input 10 VSS Ground 11 DQ0 Data Input/Output 12 DQ1 Data Input/Output 13 DQ2 Data Input/Output 14 DQ3 Data Input/Output 15 DQ4 Data Input/Output 16 DQ5 Data Input/Output 17 DQ6 Data Input/Output 18 DQ7 Data Input/Output 19 WE# Write Enable 20 OE# Output Enable 21 CE# Chip Enable 22 UB/LB# Upper Byte/Lower Byte Control 23 A8 Address Input 24 A9 Address Input 25 A11 Address Input 26 A10 Address Input 27 A19 Address Input 28 A18 Address Input 29 A17 Address Input 30 A16 Address Input 31 A15 Address Input 32 A14 Address Input 33 A13 Address Input 34 VCC Power Supply 35 NC No Connection 36 NC No Connection 37 NC No Connection 38 NC No Connection 39 NC No Connection 40 NC No Connection 41 NC No Connection 42 NC No Connection 43 NC No Connection 44 NC No Connection

Functional Features

The IS61WV25616BLL-10TLI offers the following functional features:

• Random access: The chip allows for random access to any memory location, enabling efficient data retrieval.
• Byte control: The UB/LB# pin provides control over upper and lower byte operations, allowing for flexible data manipulation.
• Write protection: The WE# pin enables write protection, preventing accidental modification of stored data.
• Low-power standby mode: The chip supports a low-power standby mode, reducing power consumption when not in use.

Advantages and Disadvantages

Advantages

• High-speed operation
• Low power consumption
• Reliable performance
• Compact package size
• Ample storage capacity

Disadvantages

• Limited storage compared to other memory technologies (e.g., NAND flash)
• Volatile memory requires constant power supply to retain data

Working Principles

The IS61WV25616BLL-10TLI operates based on the principles of static random access memory. It utilizes flip-flops to store each bit of data, which remains stable as long as power is supplied. The chip's address inputs allow for accessing