IS61WV51216EDALL-20BLI

Product Overview

Category

IS61WV51216EDALL-20BLI belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance
• Compact package size

Package

IS61WV51216EDALL-20BLI is available in a compact Ball Grid Array (BGA) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV51216EDALL-20BLI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words × 16 bits
• Operating Voltage: 3.3V
• Access Time: 20 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV51216EDALL-20BLI is as follows:

1. Vcc
2. A0-A18
3. DQ0-DQ15
4. WE#
5. OE#
6. CE#
7. UB#
8. LB#
9. CLK
10. NC
11. Vss

(Note: "NC" denotes No Connection)

Functional Features

• High-speed data access
• Easy integration into existing systems
• Low power consumption
• Multiple chip enable options for flexible control
• Byte write and byte access capability
• Automatic power-down mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Low power consumption helps prolong battery life in portable devices.
• Compact package size allows for space-efficient designs.
• Multiple chip enable options provide flexibility in system design.

Disadvantages

• Limited storage capacity compared to other memory technologies such as NAND Flash.
• Volatile memory requires constant power supply to retain data.

Working Principles

IS61WV51216EDALL-20BLI operates based on the principles of static random access memory. It stores digital information in a matrix of memory cells, with each cell representing a bit of data. The stored information can be accessed and retrieved by providing the appropriate address and control signals.

Detailed Application Field Plans

IS61WV51216EDALL-20BLI finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV51216EDALL-20BLI include: - MT48LC4M32B2P-6A: 4M x 32-bit SDRAM - AS6C4008-55BIN: 4M x 8-bit SRAM - CY62128ELL-45SXI: 128K x 8-bit SRAM - K6R4016V1D-UI10: 4M x 16-bit SRAM

(Note: The above list is not exhaustive and serves as an example of alternative models available in the market.)

In conclusion, IS61WV51216EDALL-20BLI is a high-speed, low-power static random access memory product that offers reliable performance and large storage capacity. Its compact package size and various functional features make it suitable for a wide range of applications in the electronics industry.