IS61WV6416DBLL-10TLI

Product Overview

Category

IS61WV6416DBLL-10TLI belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV6416DBLL-10TLI is available in a small outline package (SOP) format.

Essence

The essence of IS61WV6416DBLL-10TLI lies in its ability to provide fast and efficient data storage and retrieval capabilities in electronic devices.

Packaging/Quantity

IS61WV6416DBLL-10TLI is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 64 Megabits (8 Megabytes)
• Organization: 8M x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

IS61WV6416DBLL-10TLI has the following pin configuration:

1. Vcc (Power Supply)
2. A0-A22 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. WE (Write Enable)
5. OE (Output Enable)
6. CE (Chip Enable)
7. UB/LB (Upper Byte/Lower Byte Control)
8. NC (No Connection)
9. GND (Ground)

Functional Features

• Fast random access and retrieval of data
• Low power consumption in standby mode
• Easy integration into various electronic devices
• Reliable performance under different operating conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access
• Low power consumption helps conserve energy
• Large storage capacity accommodates extensive data requirements
• Compact package size enables space-efficient designs
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Susceptible to data loss in case of power failure

Working Principles

IS61WV6416DBLL-10TLI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within IS61WV6416DBLL-10TLI are organized in a matrix, with each cell capable of storing one bit of data. The address inputs are used to select a specific memory location, and the data inputs/outputs facilitate the reading and writing of data.

Detailed Application Field Plans

IS61WV6416DBLL-10TLI finds applications in various fields, including:

1. Computers and laptops for main memory storage
2. Smartphones and tablets for temporary data storage
3. Networking equipment for buffering and caching purposes
4. Industrial automation systems for data logging and processing
5. Automotive electronics for storing configuration and sensor data

Detailed and Complete Alternative Models

Some alternative models to IS61WV6416DBLL-10TLI include:

1. IS61WV6416BLL-10TLI
2. IS61WV6416DBLL-12TLI
3. IS61WV6416DBLL-15TLI
4. IS61WV6416DBLL-20TLI

These models offer similar functionality and characteristics but may differ in terms of capacity, access time, or operating voltage.

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