IS62WV5128BLL-55HI

Product Overview

Category

IS62WV5128BLL-55HI belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage device in various electronic systems and devices.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Reliable performance

Package

IS62WV5128BLL-55HI is available in a compact package, suitable for integration into different electronic applications.

Essence

The essence of IS62WV5128BLL-55HI lies in its ability to provide fast and efficient data storage and retrieval.

Packaging/Quantity

This product is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Organization: 32K words x 16 bits
• Interface: Parallel

Detailed Pin Configuration

1. Vcc - Power supply voltage
2. GND - Ground
3. A0-A14 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. NC - No connection
10. WP - Write protect
11. RY/BY - Ready/busy output
12. ZZ - Sleep mode control
13. CLK - Clock input

Functional Features

• High-speed access and operation
• Low power consumption
• Easy integration into existing systems
• Reliable data retention
• Multiple chip enable options for flexible usage

Advantages and Disadvantages

Advantages

• Fast access time enhances system performance
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates complex data requirements
• Reliable performance ensures data integrity

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Sensitive to environmental factors such as temperature and voltage fluctuations

Working Principles

IS62WV5128BLL-55HI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the device are organized into a matrix, with each cell storing a single bit of data. Accessing and modifying data in SRAM is faster compared to other memory types, making it suitable for applications requiring high-speed operation.

Detailed Application Field Plans

IS62WV5128BLL-55HI finds application in various electronic systems, including but not limited to: - Embedded systems - Networking equipment - Communication devices - Industrial automation - Automotive electronics

Its fast access time and reliable performance make it suitable for applications where real-time data processing and storage are crucial.

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55TLI - 256 kilobits (32 kilobytes) SRAM with similar specifications
2. IS62WV102416BLL-55TLI - 1 megabit (128 kilobytes) SRAM with similar specifications
3. IS62WV5128BLL-70TLI - 512 kilobits (64 kilobytes) SRAM with a slightly slower access time of 70 nanoseconds

These alternative models offer different capacities and access times, providing flexibility to meet specific application requirements.

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