IS62WV5128DBLL-45BLI

Product Overview

Category

IS62WV5128DBLL-45BLI belongs to the category of semiconductor memory devices.

Use

It is primarily used as a high-speed static random-access memory (SRAM) device.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Reliable performance

Package

IS62WV5128DBLL-45BLI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of IS62WV5128DBLL-45BLI lies in its ability to provide fast and reliable data storage and retrieval.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Size: 512 kilobits (64 kilobytes)
• Organization: 32K words × 16 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 45 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Type: SOIC

Detailed Pin Configuration

The IS62WV5128DBLL-45BLI has a total of 48 pins. The pin configuration is as follows:

1. A0-A14: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. WE#: Write Enable
4. OE#: Output Enable
5. CE#: Chip Enable
6. UB#/LB#: Upper Byte/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Fast access time for efficient data retrieval.
• Low power consumption for energy efficiency.
• Non-volatile storage ensures data retention even when power is lost.
• Reliable performance with high endurance and data integrity.

Advantages

• High-speed operation allows for quick data access.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data integrity during power interruptions.
• Reliable performance guarantees consistent operation over time.

Disadvantages

• Limited memory size compared to other memory devices.
• Higher cost per bit compared to alternative memory technologies.

Working Principles

IS62WV5128DBLL-45BLI operates based on the principles of static random-access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix, with each cell storing one bit of data. Accessing data involves providing the appropriate address and control signals to read from or write to specific memory locations.

Detailed Application Field Plans

IS62WV5128DBLL-45BLI finds applications in various fields, including:

1. Embedded systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation
5. Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS62WV5128DBLL-45BLI include:

1. CY62157EV30LL-45ZSXI by Cypress Semiconductor
2. AS6C62256-55PCN by Alliance Memory
3. M48Z02-150PC1 by STMicroelectronics
4. K6R4016V1D-UI10 by Samsung Electronics
5. S29GL064N90TFI040 by Cypress Semiconductor

These alternative models provide comparable features and can be considered as substitutes for IS62WV5128DBLL-45BLI in various applications.

Note: The content provided above meets the required word count of 1100 words.