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IXFR21N100Q
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IXFR21N100Q

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-220AB
  • Essence: Efficient power management
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Voltage Rating: 1000V
  • Current Rating: 21A
  • On-Resistance: 0.21Ω
  • Gate Threshold Voltage: 2.5V
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Low gate charge
  • Fast switching speed
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages

  • High voltage rating
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate threshold voltage compared to some alternatives
  • Limited availability in certain markets

Working Principles

The IXFR21N100Q operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The IXFR21N100Q is suitable for a wide range of power switching applications, including industrial motor drives, power supplies, and inverters. Its high voltage and current capabilities make it ideal for demanding environments.

Detailed and Complete Alternative Models

  • IXFN24N100Q
  • IRFP4668PBF
  • STW20NM60FD

This MOSFET offers a balance of high voltage and current ratings with low on-resistance, making it suitable for various power management applications.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IXFR21N100Q i tekniske løsninger

  1. What is IXFR21N100Q?

    • IXFR21N100Q is a high-performance, low-loss RF power transistor designed for use in various technical solutions requiring efficient power amplification.

  2. What are the key specifications of IXFR21N100Q?

    • The key specifications of IXFR21N100Q include a frequency range of 1.8-2.2 GHz, a power output of 100W, and a gain of 21dB.

  3. In what applications can IXFR21N100Q be used?

    • IXFR21N100Q is commonly used in applications such as base stations, wireless infrastructure, and other RF power amplifier designs.

  4. What are the advantages of using IXFR21N100Q in technical solutions?

    • The advantages of using IXFR21N100Q include its high power output, low loss, and high efficiency, making it suitable for demanding RF power amplification requirements.

  5. What are the recommended operating conditions for IXFR21N100Q?

    • The recommended operating conditions for IXFR21N100Q typically include a supply voltage of 28V and a bias current of 500mA.

  6. Are there any specific thermal considerations when using IXFR21N100Q?

    • Yes, it is important to ensure proper thermal management for IXFR21N100Q to maintain its performance and reliability, including appropriate heat sinking and thermal resistance considerations.

  7. Can IXFR21N100Q be used in conjunction with other RF components?

    • Yes, IXFR21N100Q can be integrated into RF systems alongside other components such as filters, couplers, and matching networks to form complete RF power amplifier solutions.

  8. What are the typical circuit configurations for integrating IXFR21N100Q?

    • Common circuit configurations for IXFR21N100Q include Class AB or Class C amplifier topologies, often with matching networks to optimize performance.

  9. Are there any application notes or reference designs available for IXFR21N100Q?

    • Yes, manufacturers often provide application notes and reference designs to assist engineers in implementing IXFR21N100Q in their technical solutions.

  10. Where can I find reliable sourcing for IXFR21N100Q?

    • IXFR21N100Q can be sourced from authorized distributors or directly from the manufacturer to ensure authenticity and quality.