IXTH2R4N120P
Product Overview
- Category: Power MOSFET
- Use: High power switching applications
- Characteristics: High voltage, high current capability, low on-resistance
- Package: TO-247
- Essence: Power MOSFET for high power applications
- Packaging/Quantity: Available in reels of 1000 units
Specifications
- Voltage Rating: 1200V
- Current Rating: 24A
- On-Resistance: 0.19 Ohms
- Gate Charge: 80nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The IXTH2R4N120P follows the standard pin configuration for a TO-247 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in high power applications
- Low on-resistance minimizes power loss and heat generation
- Fast switching speed for efficient operation
Advantages and Disadvantages
Advantages
- High voltage and current handling capability
- Low on-resistance for efficient power transfer
- Fast switching speed for improved performance
Disadvantages
- Higher cost compared to lower power MOSFETs
- Requires careful thermal management due to high power dissipation
Working Principles
The IXTH2R4N120P operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the device switches on, allowing high power currents to flow through.
Detailed Application Field Plans
The IXTH2R4N120P is suitable for a wide range of high power applications including: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Renewable energy systems
Detailed and Complete Alternative Models
- IXTH24N120P: Similar specifications with slightly higher current rating
- IXTH2R6N120P: Similar specifications with slightly lower on-resistance
This comprehensive entry provides an in-depth understanding of the IXTH2R4N120P, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IXTH2R4N120P i tekniske løsninger
What is IXTH2R4N120P?
- IXTH2R4N120P is a high-power insulated-gate bipolar transistor (IGBT) designed for various technical solutions requiring efficient power control.
What are the key features of IXTH2R4N120P?
- The key features include a high current rating, low saturation voltage, fast switching speed, and high ruggedness.
What applications can IXTH2R4N120P be used in?
- IXTH2R4N120P is commonly used in motor drives, renewable energy systems, industrial automation, and power supplies.
What is the maximum voltage and current rating of IXTH2R4N120P?
- The maximum voltage rating is 1200V, and the maximum current rating is 40A.
How does IXTH2R4N120P compare to other IGBTs in its class?
- IXTH2R4N120P offers lower conduction and switching losses, making it suitable for high-efficiency applications.
What cooling methods are recommended for IXTH2R4N120P?
- Adequate heat sinking and forced air cooling are recommended to maintain optimal operating temperatures.
Can IXTH2R4N120P be used in parallel configurations?
- Yes, IXTH2R4N120P can be used in parallel to increase current-handling capability in high-power applications.
What protection features does IXTH2R4N120P offer?
- IXTH2R4N120P includes built-in diodes for freewheeling and overcurrent protection, enhancing system reliability.
Are there any application notes or reference designs available for IXTH2R4N120P?
- Yes, comprehensive application notes and reference designs are available to assist in implementing IXTH2R4N120P in various technical solutions.
Where can IXTH2R4N120P be sourced from?
- IXTH2R4N120P can be sourced from authorized distributors and manufacturers, ensuring genuine and reliable components for technical solutions.