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IXTP6N50D2

IXTP6N50D2

Product Overview

Category

The IXTP6N50D2 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high voltage switching applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The IXTP6N50D2 is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 6A
  • On-Resistance (RDS(on)): 1.5Ω
  • Input Capacitance (Ciss): 1100pF
  • Power Dissipation (PD): 75W

Detailed Pin Configuration

The IXTP6N50D2 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and improves efficiency.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Higher input capacitance compared to some alternative models
  • May require additional heat dissipation in high-power applications

Working Principles

The IXTP6N50D2 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTP6N50D2 is suitable for a wide range of applications, including: - Power supplies - Motor control systems - High voltage switching circuits

Detailed and Complete Alternative Models

Some alternative models to the IXTP6N50D2 include: - IRFP460: Similar voltage and current ratings - STP6NK60ZFP: Comparable characteristics and package type

In conclusion, the IXTP6N50D2 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it an ideal choice for various power management and control applications.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af IXTP6N50D2 i tekniske løsninger

Sure, here are 10 common questions and answers related to the application of IXTP6N50D2 in technical solutions:

  1. What is IXTP6N50D2?

    • IXTP6N50D2 is a high voltage power MOSFET designed for various applications such as switch mode power supplies, lighting, and motor control.
  2. What is the maximum drain-source voltage of IXTP6N50D2?

    • The maximum drain-source voltage of IXTP6N50D2 is 500V.
  3. What is the typical on-state resistance of IXTP6N50D2?

    • The typical on-state resistance of IXTP6N50D2 is 0.65 ohms.
  4. What are the typical applications of IXTP6N50D2?

    • IXTP6N50D2 is commonly used in applications such as power supplies, inverters, and motor drives.
  5. What is the maximum continuous drain current of IXTP6N50D2?

    • The maximum continuous drain current of IXTP6N50D2 is 6A.
  6. Is IXTP6N50D2 suitable for high-frequency switching applications?

    • Yes, IXTP6N50D2 is suitable for high-frequency switching due to its low on-state resistance and fast switching characteristics.
  7. Does IXTP6N50D2 require a heat sink for thermal management?

    • It is recommended to use a heat sink for IXTP6N50D2 to ensure proper thermal management, especially in high-power applications.
  8. What is the gate-source voltage for turning on IXTP6N50D2?

    • The gate-source voltage required to turn on IXTP6N50D2 is typically around 10V.
  9. Can IXTP6N50D2 be used in automotive applications?

    • Yes, IXTP6N50D2 can be used in automotive applications where high voltage and high reliability are required.
  10. Are there any specific ESD handling precautions for IXTP6N50D2?

    • It is important to follow standard ESD handling precautions when dealing with IXTP6N50D2 to prevent damage to the device during handling and assembly processes.