M29F800FB55N3E2

Product Overview

Category

M29F800FB55N3E2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The M29F800FB55N3E2 retains stored data even when power is removed.
• High capacity: It has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The device offers quick read and write operations.
• Low power consumption: It operates efficiently with minimal power requirements.

Package

The M29F800FB55N3E2 is available in a compact and durable package suitable for integration into various electronic systems.

Essence

The essence of this product lies in its ability to provide reliable and long-term storage solutions for electronic devices.

Packaging/Quantity

The M29F800FB55N3E2 is typically packaged in trays or reels, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 1M x 8
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP
• Pin Count: 48

Detailed Pin Configuration

The M29F800FB55N3E2 features a 48-pin configuration. The pinout details are as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VPP
18. WE#
19. CE#
20. OE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. NC
30. GND
31. VCC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Erase and Program Operations: The M29F800FB55N3E2 supports both sector erase and byte program operations.
• Automatic Write Protection: It offers hardware protection against accidental writes to prevent data corruption.
• High Reliability: This device ensures data integrity and endurance through advanced error correction techniques.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited write endurance compared to other types of memory.
• Higher cost per bit compared to volatile memory technologies.

Working Principles

The M29F800FB55N3E2 utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0 or 1). The stored data can be read, erased, and programmed using specific electrical signals.

Detailed Application Field Plans

The M29F800FB55N3E2 finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. M29F800FT70N6E2
2. M29F800FB70N6E2
3. M29F800FT55N6E2
4. M29F800FB55N6E2
5. M29F800FT55N3E2

These alternative models offer similar functionality and specifications to the M29F800FB55N3E2, providing flexibility for different design requirements.

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