M29W640GH70NA6F TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface mount technology (SMT)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NOR Flash
• Density: 64 Megabits (8 Megabytes)
• Organization: 8M x 8 bits
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Package: TSOP48

Detailed Pin Configuration

The M29W640GH70NA6F TR has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. BYTE#
46. VSS
47. RP#
48. VPP

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase capability for flexible data management
• Built-in error correction code (ECC) for data integrity
• Hardware and software protection mechanisms
• Support for multiple programming algorithms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - Reliable and durable - Suitable for a wide range of electronic devices

Disadvantages: - Higher cost compared to other types of memory - Limited endurance (limited number of erase/write cycles) - Can be affected by electromagnetic interference

Working Principles

The M29W640GH70NA6F TR is based on NOR flash memory technology. It stores digital information using floating-gate transistors that can retain charge even when power is removed. The memory cells are organized in a grid-like structure, with each cell representing a bit of data. To read or write data, the appropriate address is provided, and the corresponding memory cell is accessed.

Detailed Application Field Plans

The M29W640GH70NA6F TR is widely used in various electronic devices, including:

1. Mobile phones
2. Tablets
3. Digital cameras
4. Portable media players
5. Automotive electronics
6. Industrial control systems
7. Networking equipment

Its high capacity, fast access times, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. M29W640GL70NA6F TR
2. M29W640GT70NA6F TR
3. M29W640GB70NA6F TR
4. M29W640GD70NA6F TR
5. M29W640GS70NA6F TR

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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