MT28F008B3VP-9 B TR

Product Overview

Category

MT28F008B3VP-9 B TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is removed.
• High-speed read and write operations: Enables quick access to stored data.
• Compact size: Allows for integration into small electronic devices.
• Durable: Resistant to physical shocks and vibrations.
• Low power consumption: Helps prolong battery life in portable devices.

Package

MT28F008B3VP-9 B TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

MT28F008B3VP-9 B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 8 megabits (1 megabyte)
• Organization: 512K words x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The pin configuration of MT28F008B3VP-9 B TR is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RE# - Read enable
8. WP# - Write protect
9. RY/BY# - Ready/busy status
10. VSS - Ground

Functional Features

• Block Erase: Allows for erasing data in large blocks, enabling efficient memory management.
• Page Program: Enables writing data in small page-sized increments, providing flexibility in storing and updating information.
• Read Operation: Facilitates quick retrieval of stored data.
• Error Correction Code (ECC): Provides data integrity by detecting and correcting errors during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Durable and resistant to physical shocks

Disadvantages

• Limited endurance: Flash memory cells have a finite number of erase/write cycles before they degrade.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F008B3VP-9 B TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. These charges represent binary values, allowing for non-volatile data storage. The memory cells are organized in a grid-like structure, with each cell capable of storing multiple bits of data.

During write operations, the charge is injected or removed from the floating gate to change the cell's state. Reading involves measuring the voltage level of the cell to determine the stored data.

Detailed Application Field Plans

MT28F008B3VP-9 B TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some specific application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Used for storing photos and videos.
3. Portable media players: Used for storing music, videos, and other multimedia content.
4. Industrial control systems: Used for data logging and firmware storage in automation and control applications.

Detailed and Complete Alternative Models

1. MT28F008B3VG-9 B TR
2. MT28F008B3WG-9 B TR
3. MT28F008B3VG-11 B TR
4. MT28F008B3WG-11 B TR

These alternative models offer similar specifications and functionality to MT28F008B3VP-9 B TR, providing options for different application requirements.

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