MT28F008B5VG-8 B

Product Overview

Category

MT28F008B5VG-8 B belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Low power consumption
• Durable and reliable

Package

MT28F008B5VG-8 B is available in a compact and standardized package that ensures easy integration into electronic devices. The package is designed to protect the memory chip from external factors such as moisture, dust, and physical damage.

Essence

The essence of MT28F008B5VG-8 B lies in its ability to store and retrieve data quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

MT28F008B5VG-8 B is typically packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

• Storage Capacity: 8 GB
• Interface: Parallel
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of MT28F008B5VG-8 B is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. CE (Chip Enable)
4. OE (Output Enable)
5. WE (Write Enable)
6. DQ0-DQ15 (Data Inputs/Outputs)
7. RY/BY# (Ready/Busy Output)
8. WP# (Write Protect)
9. RESET# (Reset)

Functional Features

• High-speed data transfer
• Easy integration with various electronic devices
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block erase and sector-based programming

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Durable and reliable
• Wide operating temperature range

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited erase/program cycles

Working Principles

MT28F008B5VG-8 B utilizes a floating-gate transistor technology called NAND flash memory. It stores data by trapping electric charges in the floating gate, which can be later detected as binary values (0s and 1s). The data can be written or erased using specific voltage levels applied to the control gates.

Detailed Application Field Plans

MT28F008B5VG-8 B finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT28F008B5VG-8 B include: - Samsung K9F5608U0D - Micron MT29F64G08CBABA - Toshiba TH58NVG7D2FLA89

These models offer similar specifications and functionalities, providing customers with options based on their specific requirements.

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