MT28F400B3WG-8 BET

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Integrated circuit (IC)
Essence: Non-volatile memory
Packaging/Quantity: Depends on manufacturer's specifications

Specifications

• Model: MT28F400B3WG-8 BET
• Memory Type: Flash memory
• Capacity: 4 Megabits (512 Kilobytes)
• Access Time: 80 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Pin Configuration

The MT28F400B3WG-8 BET has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. WE#
36. CE#
37. OE#
38. I/O0
39. I/O1
40. I/O2
41. I/O3
42. I/O4
43. I/O5
44. I/O6
45. I/O7
46. GND
47. NC
48. VCC

Functional Features

• Non-volatile memory: Retains data even when power is turned off
• High capacity: Stores up to 4 Megabits of data
• Fast access speed: Access time of 80 nanoseconds allows for quick data retrieval
• Parallel interface: Enables efficient data transfer

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data persistence - High storage capacity for various applications - Fast access speed allows for quick data retrieval - Parallel interface enables efficient data transfer

Disadvantages: - Limited storage capacity compared to newer memory technologies - Higher power consumption compared to some other memory devices

Working Principles

The MT28F400B3WG-8 BET operates based on the principles of flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. This alteration allows the device to retain the written data even when power is removed. To read the stored data, the transistor's conductive properties are measured.

Detailed Application Field Plans

The MT28F400B3WG-8 BET can be used in various applications that require non-volatile memory with moderate storage capacity and fast access speed. Some potential application fields include:

1. Embedded systems
2. Automotive electronics
3. Industrial control systems
4. Consumer electronics
5. Communication devices

Alternative Models

Below are some alternative models that offer similar functionality to the MT28F400B3WG-8 BET:

1. MT28F400B5WG-8 BET
2. MT28F400B3SG-8 BET
3. MT28F400B5SG-8 BET
4. MT28F400B3WG-9 BET
5. MT28F400B5WG-9 BET

These alternative models may have slight variations in specifications or package type, but they serve as suitable replacements for the MT28F400B3WG-8 BET in various applications.

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