Micron Technology Inc.
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MT28F800B5WP-8 B
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MT28F800B5WP-8 B

Overview

Category: Flash Memory
Use: Data storage in electronic devices
Characteristics: High capacity, non-volatile, fast read/write speeds
Package: 48-pin TSOP
Essence: Non-volatile memory for storing data in electronic devices
Packaging/Quantity: Individually packaged, quantity varies based on order

Specifications

  • Model: MT28F800B5WP-8 B
  • Memory Type: NOR Flash
  • Capacity: 8 Megabits (1 Megabyte)
  • Organization: 1M x 8 bits
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 70 ns
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C
  • Endurance: 100,000 program/erase cycles
  • Data Retention: 20 years

Pin Configuration

The MT28F800B5WP-8 B has a 48-pin TSOP package with the following pin configuration:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. VSS (Ground)
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. WE# (Write Enable)
  19. CE# (Chip Enable)
  20. OE# (Output Enable)
  21. BYTE#
  22. DQ0
  23. DQ1
  24. DQ2
  25. DQ3
  26. DQ4
  27. DQ5
  28. DQ6
  29. DQ7
  30. VCC (Power)
  31. RY/BY# (Ready/Busy)
  32. A16
  33. A17
  34. A18
  35. A19
  36. A20
  37. A21
  38. A22
  39. A23
  40. RESET#
  41. WP#/ACC
  42. VPP
  43. RP#
  44. VSS (Ground)
  45. NC (No Connection)
  46. NC (No Connection)
  47. NC (No Connection)
  48. NC (No Connection)

Functional Features

  • High-speed read and write operations
  • Low power consumption
  • Sector erase capability for efficient data management
  • Built-in error correction codes (ECC) for data integrity
  • Automatic program and erase algorithms for simplified operation
  • Hardware and software protection features to prevent unauthorized access

Advantages and Disadvantages

Advantages: - High capacity for storing large amounts of data - Fast read/write speeds for quick data access - Non-volatile memory retains data even when power is disconnected - Sector erase capability allows efficient data management

Disadvantages: - Limited endurance with a maximum of 100,000 program/erase cycles - Relatively higher cost compared to other types of memory - Requires additional circuitry for interfacing with the host device

Working Principles

The MT28F800B5WP-8 B is based on NOR flash memory technology. It utilizes a grid of floating-gate transistors to store data. When writing data, an electrical charge is applied to the floating gate, trapping electrons and altering the transistor's conductive properties. Reading data involves detecting the voltage level at each memory cell, which corresponds to the stored data.

Application Field Plans

The MT28F800B5WP-8 B is commonly used in various electronic devices that require non-volatile data storage, such as:

  1. Embedded systems
  2. Consumer electronics (e.g., digital cameras, MP3 players)
  3. Automotive applications (e.g., infotainment systems, instrument clusters)
  4. Industrial control systems
  5. Networking equipment

Alternative Models

  1. MT28F800B5WG-8 B: Same specifications but with a different package (48-ball VFBGA)
  2. MT28F800B5SP-8 B: Same specifications but with a different package (44-pin SOP)

These alternative models provide flexibility in choosing the appropriate package for specific design requirements while maintaining the same functionality and performance as the MT28F800B5WP-8 B.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af MT28F800B5WP-8 B i tekniske løsninger

Sure! Here are 10 common questions and answers related to the application of MT28F800B5WP-8 B in technical solutions:

  1. Question: What is the capacity of the MT28F800B5WP-8 B memory chip?
    Answer: The MT28F800B5WP-8 B has a capacity of 8 megabits (1 megabyte).

  2. Question: What is the operating voltage range for this memory chip?
    Answer: The operating voltage range for the MT28F800B5WP-8 B is typically between 2.7V and 3.6V.

  3. Question: Can I use this memory chip in industrial applications?
    Answer: Yes, the MT28F800B5WP-8 B is suitable for use in industrial applications due to its wide operating temperature range and reliability.

  4. Question: Does this memory chip support random access?
    Answer: Yes, the MT28F800B5WP-8 B supports random access, allowing for efficient read and write operations.

  5. Question: What is the maximum clock frequency supported by this memory chip?
    Answer: The MT28F800B5WP-8 B can operate at a maximum clock frequency of 50 MHz.

  6. Question: Is this memory chip compatible with standard memory interfaces?
    Answer: Yes, the MT28F800B5WP-8 B is compatible with common memory interfaces such as parallel NOR Flash.

  7. Question: Can I use this memory chip in battery-powered devices?
    Answer: Yes, the MT28F800B5WP-8 B is designed to be power-efficient, making it suitable for battery-powered devices.

  8. Question: Does this memory chip have built-in error correction capabilities?
    Answer: No, the MT28F800B5WP-8 B does not have built-in error correction capabilities. External error correction techniques may be required.

  9. Question: What is the typical access time for this memory chip?
    Answer: The typical access time for the MT28F800B5WP-8 B is around 70 nanoseconds.

  10. Question: Can I use this memory chip in automotive applications?
    Answer: Yes, the MT28F800B5WP-8 B meets the requirements for automotive applications and can withstand harsh environmental conditions.

Please note that these answers are based on general knowledge and may vary depending on specific application requirements and datasheet specifications.