MT29C1G12MAADAFAKD-6 IT

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Low power consumption
  • Compact size
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Available in reels, typically 3000 pieces per reel

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (1 Gb)
• Organization: 128 Megabytes (128 MB) x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Speed: 6 ns (nanoseconds)

Detailed Pin Configuration

The MT29C1G12MAADAFAKD-6 IT has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 48 | VCC | Power Supply (3.3V) | | 49 | WE# | Write Enable | | 50 | CE# | Chip Enable | | ... | ... | ... |

Functional Features

• High-speed data transfer
• Reliable data retention
• Error correction capabilities
• Block erase and program operations
• Page read and program operations
• Internal voltage generation for program and erase operations

Advantages

• Fast data access and transfer speeds
• Low power consumption
• Compact size allows for space-saving designs
• High reliability and durability
• Error correction ensures data integrity

Disadvantages

• Limited capacity compared to other memory devices
• Higher cost per unit compared to some alternatives
• Requires additional circuitry for proper operation

Working Principles

The MT29C1G12MAADAFAKD-6 IT is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are made up of floating-gate transistors that can be electrically programmed and erased.

When data is written to the memory, the charge level of the floating gate is adjusted to represent the desired information. Reading the data involves measuring the charge level of the floating gate to determine the stored value. Erasing the memory involves removing the charge from the floating gates, resetting the cells to an erased state.

Detailed Application Field Plans

The MT29C1G12MAADAFAKD-6 IT is commonly used in various electronic devices and systems, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Consumer electronics - Industrial applications

Detailed and Complete Alternative Models

Some alternative models to the MT29C1G12MAADAFAKD-6 IT include: - MT29F1G08ABADAWP-IT - MT29F2G08ABAEAWP-IT - MT29F4G08ABAEAWP-IT - MT29F8G08ABAEAWP-IT

These alternative models offer similar functionality and characteristics but may differ in capacity, organization, or speed.

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