MT29F128G08AKAAAC5-IT:A

Product Overview

Category

MT29F128G08AKAAAC5-IT:A belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AKAAAC5-IT:A offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F128G08AKAAAC5-IT:A is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F128G08AKAAAC5-IT:A is typically packaged in surface mount technology (SMT) packages, such as ball grid array (BGA) or quad flat package (QFP). The specific packaging type may vary depending on the manufacturer. It is commonly available in reels containing multiple units.

Specifications

• Memory Type: NAND Flash
• Capacity: 128 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Endurance: Up to 10,000 program/erase cycles
• Package Dimensions: 14mm x 18mm (approx.)

Detailed Pin Configuration

The MT29F128G08AKAAAC5-IT:A has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address lines
7. DQ0-DQ7: Data input/output lines
8. R/B: Ready/busy status
9. WP: Write protect
10. CLE: Command latch enable
11. ALE: Address latch enable

Please refer to the product datasheet for a complete pinout diagram.

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides direct access to any memory location.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick read and write operations.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F128G08AKAAAC5-IT:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, the appropriate voltages are applied to the memory cells through the pin connections.

Detailed Application Field Plans

The MT29F128G08AKAAAC5-IT:A finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F128G08AJAAAWP-IT: Similar specifications with different package dimensions.
• MT29F128G08CKCABH6-12Z:C: Higher endurance variant with 12,000 program/erase cycles.
• MT29F128G08CFABA-11R: Lower capacity variant with 64 GB storage.

These alternative models offer similar functionality and can be considered based on specific requirements and compatibility with the target application.

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