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MT29F128G08AUCBBH3-12IT:B

MT29F128G08AUCBBH3-12IT:B

Product Overview

Category

MT29F128G08AUCBBH3-12IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: MT29F128G08AUCBBH3-12IT:B offers a storage capacity of 128 gigabytes (GB).
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
  • Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: MT29F128G08AUCBBH3-12IT:B comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F128G08AUCBBH3-12IT:B NAND flash memory is typically packaged in small surface-mount packages. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: MT29F128G08AUCBBH3-12IT:B
  • Storage Capacity: 128 GB
  • Interface: NAND
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Surface Mount
  • Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

The pin configuration of MT29F128G08AUCBBH3-12IT:B is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. RE: Read Enable
  5. WE: Write Enable
  6. A0-A18: Address Inputs
  7. DQ0-DQ15: Data Input/Output
  8. R/B: Ready/Busy Status

Functional Features

  • High-speed data transfer: MT29F128G08AUCBBH3-12IT:B offers fast read and write speeds, allowing for efficient data storage and retrieval.
  • Error correction: The product incorporates advanced error correction techniques to ensure data integrity and reliability.
  • Wear-leveling algorithm: It employs a wear-leveling algorithm that evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.
  • Bad block management: MT29F128G08AUCBBH3-12IT:B includes a bad block management system that identifies and manages defective blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Low power consumption
  • Compact package size
  • Reliable performance

Disadvantages

  • Relatively higher cost compared to other storage options
  • Limited endurance (limited number of program/erase cycles)

Working Principles

MT29F128G08AUCBBH3-12IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends signals to the appropriate memory cells, enabling data retrieval or modification.

Detailed Application Field Plans

The MT29F128G08AUCBBH3-12IT:B NAND flash memory finds applications in various electronic devices, including: 1. Smartphones and tablets: Used for storing operating systems, applications, and user data. 2. Digital cameras: Enables high-capacity storage for photos and videos. 3. Solid-state drives (SSDs): Used as primary storage in computers, providing fast boot times and data access.

Detailed and Complete Alternative Models

  1. MT29F128G08AJADAWP-IT:A
  2. MT29F128G08CBACAWP-IT:C
  3. MT29F128G08CECBBH6-12IT:B
  4. MT29F128G08CMCABH7-12IT:B
  5. MT29F128G08CUCCBH9-12IT:B

These alternative models offer similar specifications and functionality to MT29F128G08AUCBBH3-12IT:B, providing options for different application requirements.

Note: The content provided above is a sample structure for an encyclopedia entry and may not reflect the actual specifications or details of the mentioned product.

Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af MT29F128G08AUCBBH3-12IT:B i tekniske løsninger

  1. Question: What is the capacity of the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B has a capacity of 128 gigabits (16 gigabytes).

  2. Question: What is the interface used by the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B uses a NAND Flash interface.

  3. Question: What is the operating voltage range for the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B operates at a voltage range of 2.7V to 3.6V.

  4. Question: What is the maximum clock frequency supported by the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B supports a maximum clock frequency of 100 MHz.

  5. Question: Does the MT29F128G08AUCBBH3-12IT:B support hardware ECC?
    Answer: Yes, the MT29F128G08AUCBBH3-12IT:B supports hardware ECC (Error Correction Code) for data integrity.

  6. Question: What is the page size of the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B has a page size of 8 kilobytes.

  7. Question: Can the MT29F128G08AUCBBH3-12IT:B be used in industrial temperature environments?
    Answer: Yes, the MT29F128G08AUCBBH3-12IT:B is designed to operate in industrial temperature ranges (-40°C to 85°C).

  8. Question: Does the MT29F128G08AUCBBH3-12IT:B support wear-leveling algorithms?
    Answer: Yes, the MT29F128G08AUCBBH3-12IT:B supports wear-leveling algorithms to evenly distribute write/erase cycles across the memory cells.

  9. Question: What is the typical data retention period of the MT29F128G08AUCBBH3-12IT:B?
    Answer: The MT29F128G08AUCBBH3-12IT:B has a typical data retention period of 10 years.

  10. Question: Is the MT29F128G08AUCBBH3-12IT:B RoHS compliant?
    Answer: Yes, the MT29F128G08AUCBBH3-12IT:B is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental regulations.