MT29F128G08AUCBBH3-12IT:B

Product Overview

Category

MT29F128G08AUCBBH3-12IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F128G08AUCBBH3-12IT:B offers a storage capacity of 128 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F128G08AUCBBH3-12IT:B comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F128G08AUCBBH3-12IT:B NAND flash memory is typically packaged in small surface-mount packages. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT29F128G08AUCBBH3-12IT:B
• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

The pin configuration of MT29F128G08AUCBBH3-12IT:B is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ15: Data Input/Output
8. R/B: Ready/Busy Status

Functional Features

• High-speed data transfer: MT29F128G08AUCBBH3-12IT:B offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Error correction: The product incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: It employs a wear-leveling algorithm that evenly distributes data writes across memory cells, extending the lifespan of the NAND flash memory.
• Bad block management: MT29F128G08AUCBBH3-12IT:B includes a bad block management system that identifies and manages defective blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively higher cost compared to other storage options
• Limited endurance (limited number of program/erase cycles)

Working Principles

MT29F128G08AUCBBH3-12IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends signals to the appropriate memory cells, enabling data retrieval or modification.

Detailed Application Field Plans

The MT29F128G08AUCBBH3-12IT:B NAND flash memory finds applications in various electronic devices, including: 1. Smartphones and tablets: Used for storing operating systems, applications, and user data. 2. Digital cameras: Enables high-capacity storage for photos and videos. 3. Solid-state drives (SSDs): Used as primary storage in computers, providing fast boot times and data access.

Detailed and Complete Alternative Models

1. MT29F128G08AJADAWP-IT:A
2. MT29F128G08CBACAWP-IT:C
3. MT29F128G08CECBBH6-12IT:B
4. MT29F128G08CMCABH7-12IT:B
5. MT29F128G08CUCCBH9-12IT:B

These alternative models offer similar specifications and functionality to MT29F128G08AUCBBH3-12IT:B, providing options for different application requirements.

Note: The content provided above is a sample structure for an encyclopedia entry and may not reflect the actual specifications or details of the mentioned product.