MT29F16G08DAAWP-ET:A TR

Product Overview

Category

MT29F16G08DAAWP-ET:A TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F16G08DAAWP-ET:A TR offers a storage capacity of 16 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F16G08DAAWP-ET:A TR is built to withstand harsh environmental conditions, ensuring data integrity even in challenging operating environments.

Package and Quantity

The MT29F16G08DAAWP-ET:A TR is available in a small form factor package, commonly known as a TSOP (Thin Small Outline Package). It is supplied in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Storage Capacity: 16 gigabytes (GB)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: TSOP

Pin Configuration

The MT29F16G08DAAWP-ET:A TR has a total of 48 pins. Here is the detailed pin configuration:

1. VCC
2. ALE
3. CLE
4. CE#
5. RE#
6. WE#
7. WP#
8. R/B#
9. VSS
10. NC
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Page Read/Program/Erase: The MT29F16G08DAAWP-ET:A TR supports page-level read, program, and erase operations, allowing for efficient data management.
• Block Management: This NAND flash memory incorporates advanced block management algorithms to optimize performance and extend the lifespan of the device.
• Error Correction Code (ECC): ECC functionality is integrated into the product to ensure data integrity and reliability during read and write operations.
• Wear Leveling: The MT29F16G08DAAWP-ET:A TR employs wear leveling techniques to evenly distribute data writes across the memory cells, preventing premature cell failure.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate allows for quick access to stored information.
• Reliable performance with low power consumption.
• Durable design ensures data integrity in challenging environments.

Disadvantages

• Limited compatibility with certain legacy devices that do not support NAND flash memory.

Working Principles

The MT29F16G08DAAWP-ET:A TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where data is stored in individual cells by trapping electrons. The presence or absence of electrons determines the binary state of each cell, representing either a "0" or a "1". Data can be read, programmed, or erased at the page level using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F16G08DAAWP-ET:A TR finds application in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs)

Its high storage capacity, fast data transfer rate, and reliability make it suitable for these devices, enabling efficient data storage and retrieval.

Alternative Models

Here are some alternative models that offer similar functionality to the MT29F16G08DAAWP-ET:A TR:

1. MT29F16G08ABABA
2. MT29F16G08CBACA 3