MT29F1G16ABCHC:C TR

Product Overview

Category

MT29F1G16ABCHC:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G16ABCHC:C TR offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory ensures reliable and durable performance.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F1G16ABCHC:C TR is available in a compact package, enabling easy integration into different devices.

Package and Quantity

The MT29F1G16ABCHC:C TR is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 gigabit
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F1G16ABCHC:C TR can be found in the datasheet provided by the manufacturer. Please refer to the datasheet for specific pin assignments and functions.

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level.
• Random Access: Provides random access to any memory location for efficient data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick read and write operations.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates easy integration into various electronic devices.
• Reliable performance ensures data integrity and durability.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabit compared to alternative memory solutions.

Working Principles

The MT29F1G16ABCHC:C TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. When data is written, the memory cells are programmed by applying specific voltage levels to store the desired information. During read operations, the stored voltage levels are interpreted to retrieve the stored data.

Application Field Plans

The MT29F1G16ABCHC:C TR finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to MT29F1G16ABCHC:C TR include: - Samsung K9K8G08U0A - Toshiba TH58NVG5D2ETA20 - Micron MT29F1G08ABADAWP

Please refer to the respective datasheets and product specifications for detailed information on these alternative models.

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