MT41K512M16TNA-125:E TR

Product Overview

Category: Memory Module
Use: This product is a high-density synchronous dynamic random-access memory (SDRAM) module.
Characteristics: The MT41K512M16TNA-125:E TR module offers high-speed data transfer, low power consumption, and large storage capacity.
Package: The module is packaged in a small form factor dual in-line memory module (DIMM).
Essence: The essence of this product lies in its ability to provide fast and reliable data storage and retrieval for various computing systems.
Packaging/Quantity: The MT41K512M16TNA-125:E TR module is typically sold in packs of 10.

Specifications

• Memory Type: Synchronous Dynamic Random-Access Memory (SDRAM)
• Density: 8 Gigabits
• Organization: 512 Megabytes x 16 bits
• Operating Voltage: 1.35V
• Speed Grade: DDR3L-1600
• CAS Latency: CL11
• Interface: 240-pin DIMM
• Operating Temperature Range: 0°C to +85°C

Detailed Pin Configuration

The MT41K512M16TNA-125:E TR module has a total of 240 pins. The pin configuration is as follows:

• Pins 1-78: Address Inputs
• Pins 79-86: Data Mask
• Pins 87-118: Data Inputs/Outputs
• Pins 119-126: Data Strobe
• Pins 127-134: Clock Inputs
• Pins 135-138: Chip Select
• Pins 139-142: Write Enable
• Pins 143-146: Read Enable
• Pins 147-150: Parity
• Pins 151-240: Not Used

Functional Features

• High-speed data transfer rate of up to 1600 Mbps
• Low power consumption for energy-efficient operation
• Large storage capacity of 8 Gigabits
• Supports advanced memory management features
• Error correction capabilities for enhanced reliability

Advantages and Disadvantages

Advantages: - Fast data transfer rate improves system performance - Low power consumption helps conserve energy - Large storage capacity accommodates demanding applications - Advanced memory management features enhance system efficiency - Error correction capabilities improve data integrity

Disadvantages: - Relatively high cost compared to lower-capacity memory modules - Limited compatibility with older systems that do not support DDR3L-1600

Working Principles

The MT41K512M16TNA-125:E TR module operates based on the principles of synchronous dynamic random-access memory. It stores data in a matrix of capacitors, which are organized into rows and columns. The module uses an internal clock signal to synchronize the reading and writing of data. When a specific memory address is accessed, the corresponding row is activated, and the data is read or written to the appropriate column.

Detailed Application Field Plans

The MT41K512M16TNA-125:E TR module finds application in various fields, including:

1. Computer Systems: Used as main memory in desktops, laptops, and servers.
2. Networking Equipment: Provides fast data storage for routers, switches, and network appliances.
3. Embedded Systems: Used in industrial control systems, automotive electronics, and IoT devices.
4. Consumer Electronics: Found in gaming consoles, digital cameras, and multimedia devices.

Detailed and Complete Alternative Models

1. MT41K256M16TW-107:P - 4 Gigabit density, DDR3L-1333 speed grade, 96-pin FBGA package.
2. MT41K1G8SN-107:P - 1 Gigabit density, DDR3L-1333 speed grade, 78-ball VFBGA package.
3. MT41K512M16HA-125:E - 8 Gigabit density, DDR3L-1600 speed grade, 96-pin FBGA package.

These alternative models offer different memory densities, speed grades, and package options to suit various system requirements.

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