MT46V64M4TG-5B:G TR

Product Overview

Category

The MT46V64M4TG-5B:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data during operation.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into various electronic devices

Package

The MT46V64M4TG-5B:G TR is typically available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval functions in electronic devices.

Packaging/Quantity

The MT46V64M4TG-5B:G TR is commonly packaged in tape and reel format, with a specified quantity per reel. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabit x 4
• Operating Voltage: 3.3V
• Speed Grade: -5B:G
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46V64M4TG-5B:G TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VDD
41. VDD
42. VSS
43. VSS
44. NC
45. NC
46. NC
47. NC
48. VSS

Functional Features

• High-speed data access: The MT46V64M4TG-5B:G TR offers fast read and write operations, enabling quick data retrieval and storage.
• Large storage capacity: With a capacity of 64 Megabits, this DRAM chip provides ample space for storing data in electronic devices.
• Low power consumption: Despite its high performance, the MT46V64M4TG-5B:G TR is designed to consume minimal power, optimizing energy efficiency in electronic devices.

Advantages and Disadvantages

Advantages

• Fast data access speeds
• Large storage capacity
• Compact size for easy integration
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply
• Susceptible to data loss in case of power failure

Working Principles

The MT46V64M4TG-5B:G TR operates based on the principles of dynamic random access memory. It stores data in capacitors within the memory cells, which need to be periodically refreshed to maintain the stored information. When a read or write operation is initiated, the appropriate row and column addresses are selected, allowing data to be accessed or written to the specific memory location.

Detailed Application Field Plans

The MT46V64M4TG-5B:G TR finds application in various electronic devices that require high-speed data storage and retrieval capabilities. Some potential application fields include:

1. Personal Computers (PCs): Used as main memory modules in desktop and laptop computers.
2. Smartphones and Tablets: Integrated into mobile devices for efficient data handling and multitasking.
3. Networking Equipment: Utilized in routers, switches, and network servers to facilitate fast data processing.
4. Automotive Electronics: Employed in automotive systems for storing critical data and enabling advanced features.
5. Industrial Control Systems: Used in automation and control systems to handle real-time data processing requirements.

Detailed and Complete Alternative Models

1. MT46V