MT47H128M8CF-3 L:H TR

Product Overview

Category

MT47H128M8CF-3 L:H TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

MT47H128M8CF-3 L:H TR is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

MT47H128M8CF-3 L:H TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 128M words x 8 bits x 8 banks
• Operating Voltage: 2.5V - 2.75V
• Clock Frequency: Up to 333 MHz
• Data Rate: Up to 667 Mbps
• Interface: Double Data Rate (DDR) SDRAM

Detailed Pin Configuration

The MT47H128M8CF-3 L:H TR has a total of 66 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. CKE
45. CK
46. VSS
47. DQM0
48. DQM1
49. DM0
50. DM1
51. VSS
52. ODT
53. VREF
54. VDD
55. VDD
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VSS
65. VSS
66. VSS

Functional Features

• High-speed data access: The MT47H128M8CF-3 L:H TR offers fast read and write operations, allowing for efficient data processing.
• Non-volatile memory: The stored data is retained even when power is removed, ensuring data integrity.
• Low power consumption: This product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact size: The small form factor of the MT47H128M8CF-3 L:H TR enables its integration into space-constrained electronic devices.

Advantages and Disadvantages

Advantages

• High-speed data access enables quick data processing.
• Non-volatile memory ensures data integrity.
• Low power consumption prolongs battery life.
• Compact size allows for easy integration into various devices.

Disadvantages

• Limited storage capacity compared to other memory options.
• Relatively higher cost per unit compared to alternative memory technologies.

Working Principles

The MT47H128M8CF-3 L:H TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory and the device it is integrated into. The data is stored in cells within the memory array, and read/write operations are performed by accessing specific memory addresses.

Detailed Application Field Plans

The MT47H128M8CF-3 L:H TR can be used in a wide range of electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access, non