Micron Technology Inc.
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MT47H512M4THN-3:H
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MT47H512M4THN-3:H

Product Overview

Category

MT47H512M4THN-3:H belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic systems.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Package

MT47H512M4THN-3:H is available in a compact and durable package, suitable for integration into various electronic devices.

Essence

The essence of MT47H512M4THN-3:H lies in its ability to store and retrieve data quickly and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

  • Model: MT47H512M4THN-3:H
  • Memory Type: Synchronous DRAM (SDRAM)
  • Capacity: 512 Megabits (64 Megabytes)
  • Organization: 4 banks x 8 Meg x 4
  • Voltage Supply: 2.5V ± 0.1V
  • Speed Grade: -3
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Double Data Rate (DDR) SDRAM

Detailed Pin Configuration

The pin configuration of MT47H512M4THN-3:H is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. CKE
  45. CK
  46. VSS
  47. DM0
  48. DM1
  49. VCCQ
  50. VSSQ

Functional Features

  • High-speed data transfer rate
  • Burst mode operation for efficient data access
  • Auto-refresh and self-refresh modes for power saving
  • On-die termination (ODT) for improved signal integrity
  • Programmable burst length and latency settings

Advantages and Disadvantages

Advantages

  • Fast and reliable data storage and retrieval
  • Low power consumption
  • Compact package size
  • Wide operating temperature range

Disadvantages

  • Relatively high cost compared to other memory technologies
  • Limited capacity compared to some newer memory devices

Working Principles

MT47H512M4THN-3:H operates based on the principles of synchronous dynamic random-access memory (SDRAM). It uses a clock signal to synchronize data transfers and employs a series of internal circuits to store and retrieve data in a highly efficient manner.

Detailed Application Field Plans

MT47H512M4THN-3:H finds applications in various electronic systems, including but not limited to: - Personal computers - Servers - Networking equipment - Consumer electronics - Automotive systems

Detailed and Complete Alternative Models

Some alternative models to MT47H512M4THN-3:H that offer similar functionality include: - MT47H256M8EB-25E: 256 Megabit DDR2 SDRAM - MT47H128M16RT-25E: 128 Megabit DDR3 SDRAM - MT47H64M16HR-25E: 64 Megabit DDR4 SDRAM

These alternative models provide different capacities, interfaces, and speed grades to cater to diverse application requirements.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af MT47H512M4THN-3:H i tekniske løsninger

Sure! Here are 10 common questions and answers related to the application of MT47H512M4THN-3:H in technical solutions:

  1. Question: What is the capacity of the MT47H512M4THN-3:H memory module?
    Answer: The MT47H512M4THN-3:H has a capacity of 512 megabytes (MB).

  2. Question: What is the speed rating of the MT47H512M4THN-3:H memory module?
    Answer: The MT47H512M4THN-3:H has a speed rating of 3, meaning it operates at a clock frequency of 333 MHz.

  3. Question: Is the MT47H512M4THN-3:H compatible with DDR3 memory slots?
    Answer: Yes, the MT47H512M4THN-3:H is designed to be compatible with DDR3 memory slots.

  4. Question: Can I use multiple MT47H512M4THN-3:H modules together for increased memory capacity?
    Answer: Yes, you can use multiple MT47H512M4THN-3:H modules together to increase your overall memory capacity.

  5. Question: What is the operating voltage range of the MT47H512M4THN-3:H?
    Answer: The MT47H512M4THN-3:H operates at a voltage range of 1.35V to 1.5V.

  6. Question: Does the MT47H512M4THN-3:H support ECC (Error Correction Code)?
    Answer: No, the MT47H512M4THN-3:H does not support ECC. It is a non-ECC memory module.

  7. Question: Can the MT47H512M4THN-3:H be used in both desktop and server applications?
    Answer: Yes, the MT47H512M4THN-3:H can be used in both desktop and server applications that require DDR3 memory.

  8. Question: What is the form factor of the MT47H512M4THN-3:H memory module?
    Answer: The MT47H512M4THN-3:H follows the Small Outline Dual In-Line Memory Module (SO-DIMM) form factor.

  9. Question: Is the MT47H512M4THN-3:H compatible with dual-channel memory configurations?
    Answer: Yes, the MT47H512M4THN-3:H can be used in dual-channel memory configurations for increased performance.

  10. Question: Can the MT47H512M4THN-3:H be used in industrial or ruggedized applications?
    Answer: Yes, the MT47H512M4THN-3:H is designed to withstand harsh environments and can be used in industrial or ruggedized applications.

Please note that these answers are based on general information about the MT47H512M4THN-3:H memory module. It's always recommended to refer to the manufacturer's documentation for specific details and compatibility requirements.