MT48LC2M32B2P-7:G TR

Product Overview

Category

The MT48LC2M32B2P-7:G TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, servers, and networking equipment for storing and accessing data quickly.

Characteristics

• High-speed operation: The MT48LC2M32B2P-7:G TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 2 megabytes (MB), this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, making it suitable for energy-efficient devices.
• Compact package: The MT48LC2M32B2P-7:G TR is available in a small form factor package, allowing for space-saving integration into electronic systems.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT48LC2M32B2P-7:G TR is typically packaged in tape and reel format, with a specified quantity per reel. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 2 Megabytes (2MB)
• Data Bus Width: 32 bits
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Speed Grade: 7
• Package Type: TSOP II
• Pin Count: 86

Detailed Pin Configuration

The MT48LC2M32B2P-7:G TR features 86 pins arranged in a specific configuration. The pinout diagram below illustrates the detailed pin configuration of this DRAM chip.

Functional Features

• Random Access: The MT48LC2M32B2P-7:G TR allows for random access to any location within its memory array, facilitating quick data retrieval.
• Refresh Capability: This DRAM chip incorporates an internal refresh mechanism to maintain data integrity over time.
• Burst Mode Operation: It supports burst mode operation, enabling consecutive data transfers without the need for repeated address input.
• Low Latency: The MT48LC2M32B2P-7:G TR offers low latency, minimizing delays in accessing stored data.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Large storage capacity accommodates substantial amounts of information.
• Low power consumption contributes to energy efficiency.
• Compact package allows for space-saving integration.
• RoHS compliance ensures environmental friendliness.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Susceptible to data loss if not properly refreshed.
• Limited scalability beyond the specified capacity.

Working Principles

The MT48LC2M32B2P-7:G TR operates based on the principles of dynamic random access memory. It utilizes a capacitor-based storage cell that requires periodic refreshing to maintain data integrity. When a read or write operation is initiated, the appropriate row and column addresses are provided, allowing the data to be accessed or modified.

Detailed Application Field Plans

The MT48LC2M32B2P-7:G TR finds applications in various electronic devices and systems, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment (routers, switches) 4. Embedded systems 5. Consumer electronics (smartphones, tablets)

Detailed and Complete Alternative Models

1. MT48LC4M32B2P-6A:G TR

   • Memory Type: Dynamic Random Access Memory (DRAM)
   • Organization: 4 Megabytes (4MB)
   • Data Bus Width: 32 bits
   • Supply Voltage: 3.3V
   • Operating Temperature Range: -40°C to +85°C
   • Speed Grade: 6
   • Package Type: TSOP II
   • Pin Count: 86

2. MT48LC8M16A2P-75:C TR

   • Memory Type: Dynamic Random Access Memory (DRAM)
   • Organization: 8 Megabytes (8MB)
   • Data Bus Width: 16 bits
   • Supply Voltage: 3.3V
   • Operating Temperature Range: -40°C to +85°C
   • Speed Grade: 75
   • Package Type: TSOP II
   • Pin Count: 86

These alternative models offer different capacities, data bus widths, and speed grades, providing flexibility for various memory requirements.