PC28F512M29EWLE

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: 48-ball FBGA package
• Essence: NAND-based flash memory chip
• Packaging/Quantity: Sold individually or in bulk quantities

Specifications

• Memory Capacity: 512 Megabits (64 Megabytes)
• Interface: Parallel NOR Flash Interface
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 90 ns
• Write Speed: Up to 900 µs
• Erase Time: Up to 2 ms

Detailed Pin Configuration

The PC28F512M29EWLE flash memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• High-speed data transfer with fast read and write speeds
• Non-volatile memory retains data even when power is disconnected
• Reliable and durable for long-term data storage
• Low power consumption for efficient operation
• Easy integration into various electronic devices

Advantages and Disadvantages

Advantages: - Large storage capacity for storing a significant amount of data - Fast read and write speeds enable quick access to stored information - Non-volatile nature ensures data integrity even during power outages - Compact package size allows for easy integration into different devices

Disadvantages: - Limited endurance, as flash memory cells have a finite number of erase/write cycles - Relatively higher cost compared to other types of memory - Susceptible to data corruption if not properly managed or protected

Working Principles

The PC28F512M29EWLE flash memory chip utilizes NAND-based technology. It consists of a grid of memory cells that store data in a series of floating-gate transistors. These transistors can be electrically programmed and erased, allowing for non-volatile data storage.

During a read operation, the memory controller sends an address to the chip, which activates the corresponding memory cell. The charge stored in the floating gate determines whether the cell represents a "0" or a "1". The controller then reads the voltage level from the selected cell to retrieve the stored data.

For write operations, the controller applies a high voltage to the control gate and a specific voltage to the source or drain terminal of the selected cell. This voltage difference causes electrons to tunnel through the insulating layer, modifying the charge on the floating gate and changing the stored data.

Detailed Application Field Plans

The PC28F512M29EWLE flash memory chip finds applications in various electronic devices, including:

1. Smartphones: Used for storing operating system files, apps, and user data.
2. Tablets: Provides storage for multimedia content, documents, and applications.
3. Digital Cameras: Stores high-resolution photos and videos.
4. Solid-State Drives (SSDs): Used as primary storage in computers for faster boot times and data access.
5. Embedded Systems: Provides non-volatile storage for firmware, configuration data, and logs.

Detailed and Complete Alternative Models

1. PC28F256M29EWLE: 256 Megabit (32 Megabyte) version of the same flash memory chip.
2. PC28F102M29EWLE: 1 Gigabit (128 Megabyte) version with higher capacity.
3. PC28F512M29EWHI: Similar flash memory chip