PBSS5130PAP,115
Product Overview
- Belongs to: Semiconductor components
- Category: Power transistor
- Use: Amplification and switching of electrical signals
- Characteristics: High power handling capability, low on-state resistance, fast switching speed
- Package: SOT666 (6-lead plastic package)
- Essence: NPN bipolar junction transistor
- Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Voltage - Collector Emitter Breakdown (Max): 30V
- Current - Collector (Ic) (Max): 3A
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C
Detailed Pin Configuration
- Base
- Emitter
- Collector
- NC (No Connection)
- Emitter
- Base
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low equivalent on-resistance
Advantages
- Suitable for high-speed switching applications
- Small footprint package
- Low power dissipation
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to overvoltage conditions
Working Principles
The PBSS5130PAP,115 is a NPN bipolar junction transistor designed for high-speed switching applications. When a small signal is applied to the base terminal, it controls the larger current flowing between the collector and emitter terminals, allowing for amplification and switching of electrical signals.
Detailed Application Field Plans
This transistor is commonly used in applications such as: - Switching power supplies - LED lighting drivers - Motor control circuits - Audio amplifiers
Detailed and Complete Alternative Models
- PBSS4130PAP,115
- PBSS5130T,115
- PBSS5130X,115
Note: The alternative models listed above have similar characteristics and can be used as substitutes for the PBSS5130PAP,115.
This comprehensive entry provides detailed information about the PBSS5130PAP,115 semiconductor component, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af PBSS5130PAP,115 i tekniske løsninger
What is PBSS5130PAP,115?
- PBSS5130PAP,115 is a high-performance NPN bipolar junction transistor (BJT) designed for use in various technical solutions.
What are the key specifications of PBSS5130PAP,115?
- The key specifications include a maximum collector current of 3A, a collector-emitter voltage of 30V, and a low saturation voltage.
In what applications can PBSS5130PAP,115 be used?
- PBSS5130PAP,115 can be used in power management, motor control, lighting, and other general-purpose switching applications.
What is the thermal resistance of PBSS5130PAP,115?
- The thermal resistance of PBSS5130PAP,115 is typically around 125°C/W, which is important for determining its heat dissipation capabilities.
Does PBSS5130PAP,115 require any special handling during assembly?
- No special handling is required during assembly, but it's important to follow standard ESD precautions to prevent damage to the device.
Can PBSS5130PAP,115 be used in automotive applications?
- Yes, PBSS5130PAP,115 is AEC-Q101 qualified, making it suitable for use in automotive systems.
What are the recommended operating conditions for PBSS5130PAP,115?
- The recommended operating temperature range is -55°C to 150°C, and the maximum junction temperature is 150°C.
Is PBSS5130PAP,115 RoHS compliant?
- Yes, PBSS5130PAP,115 is RoHS compliant, ensuring that it meets environmental standards.
What are the typical performance characteristics of PBSS5130PAP,115?
- Typical performance characteristics include high current gain, low saturation voltage, and fast switching times.
Are there any application notes or reference designs available for using PBSS5130PAP,115?
- Yes, application notes and reference designs are available to help engineers integrate PBSS5130PAP,115 into their technical solutions effectively.