BF909WR,135

Product Overview

• Category: Electronic Component
• Use: Amplification and Signal Processing
• Characteristics: High gain, low noise, small form factor
• Package: SOT-23
• Essence: Field Effect Transistor (FET)
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Type: N-Channel
• Drain-Source Voltage (Vdss): 12V
• Gate-Source Voltage (Vgss): ±20V
• Drain Current (Id): 30mA
• Power Dissipation (Pd): 225mW
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• High Gain: Provides significant amplification of input signals.
• Low Noise: Minimizes unwanted interference in signal processing applications.
• Small Form Factor: Ideal for compact electronic devices and circuit designs.

Advantages and Disadvantages

Advantages

• High gain allows for effective signal amplification.
• Low noise enhances signal clarity.
• Small form factor enables integration into space-constrained designs.

Disadvantages

• Limited drain current may not be suitable for high-power applications.
• Narrow operating temperature range may restrict use in extreme environments.

Working Principles

The BF909WR,135 operates as an N-channel FET, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. This configuration allows for precise signal amplification and processing.

Detailed Application Field Plans

The BF909WR,135 is well-suited for various applications, including: - Radio Frequency (RF) amplifiers - Low-noise preamplifiers - Signal processing circuits in communication systems

Detailed and Complete Alternative Models

• BF862
• BF545B
• BF256B

In conclusion, the BF909WR,135 offers high gain, low noise, and a compact package, making it an ideal choice for amplification and signal processing in various electronic applications.

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