MRF8S9170NR3

Product Overview

The MRF8S9170NR3 belongs to the category of RF power transistors and is designed for use in high-power amplifiers. This transistor exhibits characteristics such as high power gain, efficiency, and linearity. It is typically packaged in a ceramic package with essential thermal management features. The packaging includes the necessary quantity of transistors required for specific applications.

Specifications

• Frequency Range: 2.3 - 2.7 GHz
• Output Power: 70 Watts
• Gain: 14 dB
• Efficiency: 55%
• Package Type: Ceramic
• Quantity: Single unit or multiple units per package

Detailed Pin Configuration

The MRF8S9170NR3 features a detailed pin configuration with specific pins allocated for input, output, biasing, and thermal connections. The pinout ensures proper integration into amplifier circuits and facilitates efficient heat dissipation.

Functional Features

• High Power Gain: Provides significant amplification of input signals.
• High Efficiency: Ensures minimal power loss during signal amplification.
• Linearity: Maintains signal integrity by minimizing distortion.
• Thermal Management: Integrated features for effective heat dissipation.

Advantages and Disadvantages

Advantages: - High power gain enables effective signal amplification. - High efficiency results in reduced power consumption. - Excellent linearity preserves signal quality.

Disadvantages: - Limited frequency range may not be suitable for broader spectrum applications.

Working Principles

The MRF8S9170NR3 operates based on the principles of RF amplification, where input signals are amplified with high gain and efficiency. The transistor's linearity ensures that the amplified signals closely resemble the input, making it suitable for various communication and radar applications.

Detailed Application Field Plans

The MRF8S9170NR3 is ideal for applications requiring high-power amplification in the 2.3 - 2.7 GHz frequency range. It finds extensive use in radar systems, communication transmitters, and high-power industrial applications.

Detailed and Complete Alternative Models

• MRF8S18120HR3: Offers higher output power in a similar frequency range.
• MRF7S21110NBR1: Suitable for lower power applications within the same frequency band.

This comprehensive entry provides an in-depth understanding of the MRF8S9170NR3, its specifications, functional features, advantages, and application scenarios, catering to the needs of professionals and enthusiasts in the field of RF electronics.