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2N5460G

2N5460G

Product Overview

The 2N5460G is a P-channel JFET (junction field-effect transistor) belonging to the category of electronic components. It is commonly used in various electronic circuits for its unique characteristics and performance. The 2N5460G is typically packaged in TO-92 form, which contains three leads for connection. Its essence lies in its ability to control current flow based on voltage applied at the gate terminal. The packaging usually includes a quantity of 50 pieces per pack.

Specifications

  • Maximum Drain-Source Voltage: -40V
  • Maximum Gate-Source Voltage: ±40V
  • Maximum Continuous Drain Current: -150mA
  • Power Dissipation: 350mW
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 2N5460G features three pins: the source (S), gate (G), and drain (D). The source is connected to the ground or the negative supply, the gate controls the current flow, and the drain is connected to the load.

Functional Features

The 2N5460G operates as a voltage-controlled resistor, allowing it to regulate current flow through the channel based on the voltage applied at the gate terminal. This feature makes it suitable for various applications where precise current control is required.

Advantages and Disadvantages

Advantages: - Precise current regulation - Low input capacitance - High input impedance

Disadvantages: - Susceptible to damage from static electricity - Limited maximum voltage and current ratings

Working Principles

The 2N5460G operates based on the principle of controlling the conductivity of the channel between the source and drain terminals using the voltage applied at the gate terminal. By modulating the gate-source voltage, the current flow through the channel can be precisely regulated.

Detailed Application Field Plans

The 2N5460G finds extensive use in various electronic applications, including: - Analog signal processing circuits - Audio amplifiers - Voltage-controlled oscillators - Switching circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N5460G include: - J175 - J176 - J177 - BF245

In conclusion, the 2N5460G is a versatile P-channel JFET with precise current regulation capabilities, making it an essential component in numerous electronic circuits and applications.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af 2N5460G i tekniske løsninger

  1. What is the 2N5460G transistor used for?

    • The 2N5460G is a P-channel JFET (junction field-effect transistor) commonly used for low-power switching and amplification applications.
  2. What are the key specifications of the 2N5460G transistor?

    • The 2N5460G typically has a maximum drain-source voltage of -40V, a maximum gate-source voltage of ±40V, and a maximum continuous drain current of -10mA.
  3. How can the 2N5460G be used in amplifier circuits?

    • The 2N5460G can be used as a voltage-controlled resistor in amplifier circuits, providing variable gain control.
  4. Can the 2N5460G be used for audio signal processing?

    • Yes, the 2N5460G can be used in audio applications such as preamplifiers and equalizers due to its low noise and high input impedance.
  5. What are some common applications of the 2N5460G in electronic projects?

    • The 2N5460G is often used in low-frequency amplifiers, analog switches, and voltage-controlled resistors in various electronic projects.
  6. What are the typical operating conditions for the 2N5460G?

    • The 2N5460G operates well within a temperature range of -55°C to 150°C and requires a low input bias current for optimal performance.
  7. How does the 2N5460G compare to other JFET transistors in terms of performance?

    • The 2N5460G offers low on-state resistance and high transconductance, making it suitable for many low-power applications.
  8. Are there any specific considerations when designing circuits with the 2N5460G?

    • It's important to consider the proper biasing and voltage levels to ensure the 2N5460G operates within its specified parameters.
  9. Can the 2N5460G be used in battery-powered devices?

    • Yes, the 2N5460G's low power consumption and low voltage operation make it suitable for use in battery-powered devices.
  10. Where can I find detailed technical information and application notes for the 2N5460G?

    • Detailed technical information and application notes for the 2N5460G can be found in the manufacturer's datasheet and application guides, which provide comprehensive guidance for using the transistor in various technical solutions.