2SB1124T-TD-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and high frequency capability - Package: TO-252-3 (DPAK) - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Typically packaged in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 60V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 3A - Power Dissipation (PD): 2W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor
Functional Features: - High current gain for amplification applications - Low noise characteristics suitable for signal processing - High frequency capability for RF applications
Advantages: - Suitable for high-frequency applications - Low noise performance - Compact DPAK package for efficient heat dissipation
Disadvantages: - Limited power dissipation capability compared to larger packages - Relatively lower voltage and current ratings compared to some alternative models
Working Principles: The 2SB1124T-TD-E operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers in the semiconductor material to control current flow.
Detailed Application Field Plans: - Audio amplification circuits - Radio frequency (RF) amplifiers - Switching circuits in electronic devices
Detailed and Complete Alternative Models: - 2SD882, 2N3904, BC547, BC548, etc.
This comprehensive entry provides a detailed overview of the 2SB1124T-TD-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af 2SB1124T-TD-E i tekniske løsninger
What is the maximum collector current of 2SB1124T-TD-E?
- The maximum collector current of 2SB1124T-TD-E is 3A.
What is the maximum collector-emitter voltage of 2SB1124T-TD-E?
- The maximum collector-emitter voltage of 2SB1124T-TD-E is 50V.
What is the power dissipation of 2SB1124T-TD-E?
- The power dissipation of 2SB1124T-TD-E is 1W.
What are the typical applications of 2SB1124T-TD-E?
- Typical applications of 2SB1124T-TD-E include audio amplification, switching circuits, and general purpose electronic applications.
What is the gain (hFE) of 2SB1124T-TD-E?
- The gain (hFE) of 2SB1124T-TD-E typically ranges from 60 to 120.
Is 2SB1124T-TD-E suitable for low-power applications?
- Yes, 2SB1124T-TD-E is suitable for low-power applications due to its low power dissipation and moderate gain.
Can 2SB1124T-TD-E be used in high-frequency circuits?
- While it is not specifically designed for high-frequency applications, 2SB1124T-TD-E can be used in moderate frequency circuits with appropriate design considerations.
What are the thermal characteristics of 2SB1124T-TD-E?
- The thermal resistance from junction to case (RthJC) of 2SB1124T-TD-E is typically 83°C/W.
Does 2SB1124T-TD-E require a heat sink in certain applications?
- Depending on the specific application and power dissipation, a heat sink may be required to ensure proper thermal management.
Are there any recommended complementary transistors to use with 2SB1124T-TD-E?
- Complementary transistors such as 2SD1802T-TD-E or similar PNP transistors can be used in conjunction with 2SB1124T-TD-E for complementary pair configurations.