ON Semiconductor
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2SD1060S-1E
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2SD1060S-1E

Product Overview

Category

The 2SD1060S-1E belongs to the category of semiconductor devices.

Use

It is commonly used as a power transistor in electronic circuits.

Characteristics

  • High voltage capability
  • Low collector-emitter saturation voltage
  • Fast switching speed

Package

The 2SD1060S-1E is typically available in a TO-220F package.

Essence

This product is essential for amplifying and switching electronic signals in various applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Base Voltage (VCBO): [specification]
  • Collector-Emitter Voltage (VCEO): [specification]
  • Emitter-Base Voltage (VEBO): [specification]
  • Collector Current (IC): [specification]
  • Power Dissipation (PD): [specification]
  • Transition Frequency (fT): [specification]

Detailed Pin Configuration

The 2SD1060S-1E typically has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low collector-emitter saturation voltage ensures efficient operation.
  • Fast switching speed enables quick response in electronic circuits.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed

Disadvantages

  • Heat dissipation may be a concern in high-power applications.

Working Principles

The 2SD1060S-1E operates based on the principles of bipolar junction transistors, where controlled amplification and switching of electronic signals occur through the manipulation of current flow.

Detailed Application Field Plans

The 2SD1060S-1E finds application in various fields such as: - Power supply units - Audio amplifiers - Motor control circuits

Detailed and Complete Alternative Models

Some alternative models to the 2SD1060S-1E include: - 2SD882 - 2SD1047 - 2SD1555

In conclusion, the 2SD1060S-1E is a versatile semiconductor device with high voltage capability, fast switching speed, and low saturation voltage, making it suitable for a wide range of electronic applications.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af 2SD1060S-1E i tekniske løsninger

  1. What is the maximum collector current of 2SD1060S-1E?

    • The maximum collector current of 2SD1060S-1E is 3A.

  2. What is the maximum collector-emitter voltage of 2SD1060S-1E?

    • The maximum collector-emitter voltage of 2SD1060S-1E is 160V.

  3. What are the typical applications of 2SD1060S-1E?

    • 2SD1060S-1E is commonly used in audio amplifiers, power supply circuits, and motor control applications.

  4. What is the power dissipation of 2SD1060S-1E?

    • The power dissipation of 2SD1060S-1E is 30W.

  5. What is the gain (hFE) of 2SD1060S-1E?

    • The gain (hFE) of 2SD1060S-1E typically ranges from 40 to 320.

  6. Is 2SD1060S-1E suitable for high-frequency applications?

    • No, 2SD1060S-1E is not recommended for high-frequency applications due to its lower transition frequency.

  7. Can 2SD1060S-1E be used in switching applications?

    • Yes, 2SD1060S-1E can be used in low-frequency switching applications.

  8. What is the package type of 2SD1060S-1E?

    • 2SD1060S-1E is available in a TO-220F package.

  9. Does 2SD1060S-1E require a heat sink for operation?

    • Yes, it is recommended to use a heat sink when operating 2SD1060S-1E to dissipate heat effectively.

  10. What are the key thermal characteristics of 2SD1060S-1E?

    • The key thermal characteristics include a thermal resistance junction to case (RthJC) of 3.13°C/W and a thermal resistance junction to ambient (RthJA) of 62.5°C/W.