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DTC143ZET1G
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DTC143ZET1G

Introduction

The DTC143ZET1G is a bipolar junction transistor (BJT) belonging to the category of discrete semiconductor devices. This device is commonly used in electronic circuits for amplification and switching applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching in Electronic Circuits
  • Characteristics: High Gain, Low Noise, Small Package Size
  • Package: SOT-23-3
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The DTC143ZET1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain (hFE)
  • Low noise
  • Fast switching speed
  • Small package size for space-constrained designs

Advantages and Disadvantages

Advantages

  • High gain allows for signal amplification
  • Low noise makes it suitable for sensitive applications
  • Small package size enables compact circuit design

Disadvantages

  • Limited collector current compared to power transistors
  • Limited power dissipation capability

Working Principles

The DTC143ZET1G operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals, allowing for amplification or switching of signals in electronic circuits.

Detailed Application Field Plans

The DTC143ZET1G is widely used in various electronic applications, including: - Audio amplifiers - Signal processing circuits - Switching circuits - Sensor interfaces - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the DTC143ZET1G include: - BC547B - 2N3904 - 2SC945 - KSP2222A

In conclusion, the DTC143ZET1G is a versatile NPN bipolar junction transistor with high gain and low noise characteristics, making it suitable for a wide range of amplification and switching applications in electronic circuits.

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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af DTC143ZET1G i tekniske løsninger

  1. What is the maximum collector current of DTC143ZET1G?

    • The maximum collector current of DTC143ZET1G is 100mA.

  2. What is the typical hFE (DC current gain) of DTC143ZET1G?

    • The typical hFE of DTC143ZET1G is 120-400 at VCE = 5V, IC = 2mA.

  3. What is the maximum VCE (collector-emitter voltage) of DTC143ZET1G?

    • The maximum VCE of DTC143ZET1G is 50V.

  4. What are the package dimensions of DTC143ZET1G?

    • DTC143ZET1G comes in a SOT-323 package with dimensions of 2.00mm x 1.25mm x 1.10mm.

  5. What is the power dissipation of DTC143ZET1G?

    • The power dissipation of DTC143ZET1G is 150mW.

  6. What are the recommended operating and storage temperatures for DTC143ZET1G?

    • The recommended operating temperature range for DTC143ZET1G is -55°C to 150°C, and the storage temperature range is -55°C to 150°C.

  7. Is DTC143ZET1G RoHS compliant?

    • Yes, DTC143ZET1G is RoHS compliant.

  8. What are the typical applications of DTC143ZET1G?

    • DTC143ZET1G is commonly used in switching and amplification applications in various electronic circuits.

  9. Does DTC143ZET1G require external base resistor for operation?

    • Yes, DTC143ZET1G requires an external base resistor for proper operation.

  10. What are the key differences between DTC143ZET1G and similar transistors?

    • DTC143ZET1G offers low saturation voltage and high current gain compared to similar transistors, making it suitable for specific technical solutions.