ON Semiconductor
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MMUN2211LT3G
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MMUN2211LT3G

Product Overview

  • Category: Transistor
  • Use: Amplification and switching of electronic signals
  • Characteristics: Low voltage, high current capability
  • Package: SOT-23
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 600mA
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
  • Transition Frequency: 250MHz

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for low voltage applications
  • High current capability

Disadvantages

  • Limited power dissipation capability
  • Moderate transition frequency

Working Principles

The MMUN2211LT3G operates as a current amplifier, controlling the flow of current between its collector and emitter terminals based on the current flowing into its base terminal.

Detailed Application Field Plans

  1. Audio amplification circuits
  2. Switching circuits in portable electronic devices
  3. LED driver circuits

Detailed and Complete Alternative Models

  1. BC337
  2. 2N2222
  3. 2N3904

1100 words

This content provides a comprehensive overview of the MMUN2211LT3G transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. If you need further details or modifications, feel free to ask!

Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af MMUN2211LT3G i tekniske løsninger

  1. What is MMUN2211LT3G?

    • MMUN2211LT3G is a dual NPN/PNP small signal surface mount transistor used in various technical solutions.

  2. What are the typical applications of MMUN2211LT3G?

    • The typical applications of MMUN2211LT3G include amplification, switching, and signal processing in electronic circuits.

  3. What are the electrical characteristics of MMUN2211LT3G?

    • The electrical characteristics include low collector-emitter saturation voltage, high current gain, and low leakage current.

  4. How does MMUN2211LT3G compare to other transistors in its class?

    • MMUN2211LT3G offers a balance of performance, size, and cost, making it suitable for a wide range of technical solutions.

  5. Can MMUN2211LT3G be used in high-frequency applications?

    • Yes, MMUN2211LT3G can be used in moderate to high-frequency applications due to its fast switching speed and low parasitic capacitance.

  6. What are the recommended operating conditions for MMUN2211LT3G?

    • The recommended operating conditions include a maximum collector current, voltage ratings, and temperature range for reliable performance.

  7. Are there any specific layout considerations when using MMUN2211LT3G in a circuit?

    • It's important to minimize lead lengths, provide adequate heat sinking, and ensure proper grounding for optimal performance.

  8. Can MMUN2211LT3G be used in automotive or industrial applications?

    • Yes, MMUN2211LT3G is suitable for automotive and industrial applications due to its robustness and reliability.

  9. What are the packaging options available for MMUN2211LT3G?

    • MMUN2211LT3G is available in various surface mount packages such as SOT-23 and SC-88, offering flexibility in design and assembly.

  10. Where can I find detailed application notes and reference designs for MMUN2211LT3G?

    • Detailed application notes and reference designs for MMUN2211LT3G can be found on the manufacturer's website or through authorized distributors.