MPSH10RLRAG
Product Overview
Category
The MPSH10RLRAG belongs to the category of small signal transistors.
Use
It is commonly used in low-power amplification and switching applications.
Characteristics
- Small size
- Low power consumption
- High gain
- Fast switching speed
Package
The MPSH10RLRAG is typically available in a TO-92 package.
Essence
This transistor is essential for amplifying weak signals and controlling small currents.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Collector-Base Voltage (VCBO): 45V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Power Dissipation (PD): 625mW
- Transition Frequency (fT): 250MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The MPSH10RLRAG has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High voltage capability
- Low leakage current
- Good linearity
Advantages
- Small form factor
- Versatile application range
- Reliable performance
Disadvantages
- Limited power handling capacity
- Sensitive to overvoltage conditions
Working Principles
The MPSH10RLRAG operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the input signal applied to the base terminal.
Detailed Application Field Plans
This transistor is widely used in audio amplifiers, oscillators, and low-power switching circuits. It is also employed in sensor interfaces and signal conditioning circuits due to its high gain and low noise characteristics.
Detailed and Complete Alternative Models
Some alternative models to the MPSH10RLRAG include: - 2N3904 - BC547 - 2N2222 - BC548
In conclusion, the MPSH10RLRAG is a versatile small signal transistor that finds extensive use in various electronic circuits requiring low-power amplification and switching capabilities.
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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af MPSH10RLRAG i tekniske løsninger
What is MPSH10RLRAG?
- MPSH10RLRAG is a high-frequency NPN transistor commonly used in RF and microwave applications.
What are the key specifications of MPSH10RLRAG?
- The key specifications include a maximum collector current of 0.1A, a maximum power dissipation of 0.5W, and a transition frequency of 500MHz.
In what technical solutions is MPSH10RLRAG commonly used?
- MPSH10RLRAG is commonly used in RF amplifiers, oscillators, mixers, and other high-frequency applications.
What are the typical operating conditions for MPSH10RLRAG?
- The typical operating conditions include a collector-emitter voltage (Vce) of 20V, a collector current (Ic) of 50mA, and a power dissipation (Pd) of 500mW.
Can MPSH10RLRAG be used in low-noise amplifier designs?
- Yes, MPSH10RLRAG can be used in low-noise amplifier designs due to its low noise figure and high frequency capabilities.
What are the recommended biasing configurations for MPSH10RLRAG?
- Common biasing configurations include fixed bias, emitter bias, and voltage divider bias, depending on the specific application requirements.
Does MPSH10RLRAG require any special handling during assembly or soldering?
- MPSH10RLRAG is sensitive to electrostatic discharge (ESD) and should be handled using appropriate ESD precautions during assembly and soldering.
Are there any known reliability issues with MPSH10RLRAG?
- MPSH10RLRAG is known for its reliability and ruggedness when operated within its specified parameters.
Can MPSH10RLRAG be used in high-power applications?
- No, MPSH10RLRAG is not suitable for high-power applications due to its limited power dissipation capability.
Where can I find detailed application notes and reference designs for using MPSH10RLRAG in technical solutions?
- Detailed application notes and reference designs for MPSH10RLRAG can be found in the manufacturer's datasheet, application guides, and online technical resources.