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NVMFS5C460NLWFT3G

NVMFS5C460NLWFT3G

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DFN5x6 package
  • Essence: Advanced power management solution
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage Rating: 30V
  • Continuous Drain Current (at 25°C): 120A
  • RDS(ON) Max @ VGS = 10V: 4.6mΩ
  • Gate Threshold Voltage (Max): 2.35V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NVMFS5C460NLWFT3G features a DFN5x6 package with the following pin configuration: 1. Source 2. Gate 3. Drain 4. Not connected 5. Source

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability
  • Robust design for rugged applications
  • Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Enhanced thermal performance
  • Robust design

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Sensitive to electrostatic discharge (ESD)

Working Principles

The NVMFS5C460NLWFT3G operates based on the principle of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the source and drain terminals. By modulating the gate voltage, the device can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The NVMFS5C460NLWFT3G is ideally suited for various power switching applications, including: - DC-DC converters - Motor control - Battery protection - Power supplies - Load switches

Detailed and Complete Alternative Models

For users seeking alternative models, the following options are available: - NVMFS5C430NLWFT3G - NVMFS5C470NLWFT3G - NVMFS5C490NLWFT3G

This comprehensive range of alternatives provides flexibility in selecting the most suitable power MOSFET for specific application requirements.

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