R1LV1616RSA-5SI#B0

Product Overview

Category: Integrated Circuit (IC)

Use: Memory chip

Characteristics: - High-speed random access memory - Low power consumption - Large storage capacity - Reliable performance

Package: Small Outline Integrated Circuit (SOIC)

Essence: The R1LV1616RSA-5SI#B0 is a high-performance memory chip designed for various electronic devices.

Packaging/Quantity: Each package contains one R1LV1616RSA-5SI#B0 memory chip.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 16M words × 16 bits
• Supply Voltage: 3.3V ± 0.3V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 55 ns (max)
• Standby Current: 10 μA (typical)
• Package Dimensions: 150 mil (width) × 300 mil (length)

Detailed Pin Configuration

The R1LV1616RSA-5SI#B0 has a total of 48 pins, which are assigned as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage input | | 2 | A0-A18 | Address inputs | | 19 | DQ0-DQ15 | Data inputs/outputs | | 20 | WE | Write enable input | | 21 | OE | Output enable input | | 22 | CE1 | Chip enable input | | 23 | CE2 | Chip enable input | | 24 | CE3 | Chip enable input | | ... | ... | ... | | 48 | GND | Ground |

Functional Features

• High-speed operation allows for quick data access.
• Low power consumption ensures energy efficiency.
• Large storage capacity accommodates extensive data requirements.
• Reliable performance guarantees data integrity and stability.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity meets the demands of data-intensive applications. - Reliable performance ensures data integrity and system stability.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited scalability beyond the specified storage capacity.

Working Principles

The R1LV1616RSA-5SI#B0 operates based on static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip utilizes an array of memory cells that can be accessed randomly, allowing for fast read and write operations.

Detailed Application Field Plans

The R1LV1616RSA-5SI#B0 memory chip finds application in various electronic devices, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

1. R1LV1616RSA-7SI#B0: Similar to R1LV1616RSA-5SI#B0, but with a faster access time of 70 ns.
2. R1LV1616RSA-3SI#B0: Similar to R1LV1616RSA-5SI#B0, but with a lower access time of 35 ns.
3. R1LV1616RSA-5SI#B1: Similar to R1LV1616RSA-5SI#B0, but with an extended operating temperature range of -40°C to +105°C.

These alternative models provide options for different performance requirements and environmental conditions.

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Note: The above content is a sample entry and may not reflect the actual specifications and details of the R1LV1616RSA-5SI#B0 memory chip. Please refer to the product documentation for accurate information.