2SB1188T100R
Product Overview
Category
The 2SB1188T100R belongs to the category of bipolar transistors.
Use
It is commonly used as a switching device in electronic circuits.
Characteristics
- High voltage capability
- Low collector saturation voltage
- Fast switching speed
Package
The 2SB1188T100R is typically available in a TO-220 package.
Essence
This transistor is essential for controlling the flow of current in electronic devices and circuits.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Collector-Base Voltage (VCBO): 120V
- Collector-Emitter Voltage (VCEO): 120V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 3A
- Power Dissipation (PD): 20W
- Transition Frequency (fT): 30MHz
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The 2SB1188T100R typically has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High voltage capability allows for use in various applications
- Low collector saturation voltage minimizes power loss
- Fast switching speed enables efficient circuit operation
Advantages
- Suitable for high voltage applications
- Low power dissipation
- Fast response time
Disadvantages
- Limited maximum collector current compared to some alternatives
- Relatively lower transition frequency
Working Principles
The 2SB1188T100R operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.
Detailed Application Field Plans
The 2SB1188T100R is commonly used in: - Power supply circuits - Audio amplifiers - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to the 2SB1188T100R include: - 2N3055 - TIP31C - BD139
In conclusion, the 2SB1188T100R is a versatile bipolar transistor with high voltage capability, making it suitable for a wide range of applications in electronic circuits.
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Liste 10 almindelige spørgsmål og svar relateret til anvendelsen af 2SB1188T100R i tekniske løsninger
What is the maximum collector current of 2SB1188T100R?
- The maximum collector current of 2SB1188T100R is 3A.
What is the maximum collector-emitter voltage of 2SB1188T100R?
- The maximum collector-emitter voltage of 2SB1188T100R is 120V.
What is the power dissipation of 2SB1188T100R?
- The power dissipation of 2SB1188T100R is 1W.
What are the typical applications of 2SB1188T100R?
- 2SB1188T100R is commonly used in audio amplifier circuits, voltage regulator modules, and power management systems.
What is the gain (hFE) of 2SB1188T100R?
- The gain (hFE) of 2SB1188T100R typically ranges from 60 to 320.
Is 2SB1188T100R suitable for high-frequency applications?
- No, 2SB1188T100R is not recommended for high-frequency applications due to its limited frequency response.
Can 2SB1188T100R be used in switching applications?
- Yes, 2SB1188T100R can be used in low-power switching applications.
What are the thermal characteristics of 2SB1188T100R?
- The thermal resistance junction to case (RthJC) of 2SB1188T100R is approximately 83°C/W.
Does 2SB1188T100R require a heat sink in certain applications?
- Yes, a heat sink may be necessary for 2SB1188T100R in high-power or continuous operation to maintain proper temperature.
Are there any specific precautions to consider when using 2SB1188T100R in technical solutions?
- It is important to ensure proper heat dissipation and avoid exceeding the maximum ratings to prevent damage to the device. Additionally, attention should be given to the layout and design of the circuit to minimize thermal issues and maximize performance.