STF100N10F7

Introduction

STF100N10F7 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in electronic circuits for its high power handling capabilities and low on-state resistance. The following entry provides an overview of STF100N10F7, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

Category: Semiconductor Device
Use: Power switching applications
Characteristics: High power handling, low on-state resistance
Package: TO-220
Essence: Power MOSFET
Packaging/Quantity: Typically sold in reels or tubes containing multiple units

Specifications

Voltage Rating: 100V
Current Rating: 100A
On-State Resistance: 7mΩ
Gate Threshold Voltage: 2-4V
Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

Source (S)
Gate (G)
Drain (D)

Functional Features

High power handling capacity
Low on-state resistance
Fast switching speed
Low gate drive power required

Advantages and Disadvantages

Advantages

Efficient power handling
Low conduction losses
Suitable for high-frequency applications

Disadvantages

Sensitivity to overvoltage spikes
Gate capacitance can affect high-frequency performance

Working Principles

STF100N10F7 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the source and drain terminals. This allows for efficient power switching in electronic circuits.

Detailed Application Field Plans

STF100N10F7 finds extensive use in various power electronics applications, including: - Switch-mode power supplies - Motor control systems - Inverters and converters - Audio amplifiers - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to STF100N10F7 include: - IRF540N - FDP8870 - IRLB8748 - IPP60R190E6

In conclusion, STF100N10F7 is a versatile power MOSFET with high power handling capabilities and low on-state resistance, making it suitable for a wide range of power electronics applications.

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